| PartNumber | ZXMN6A11ZTA | ZXMN6A11DN8TA | ZXMN6A11GTA |
| Description | MOSFET 60V N-Chnl UMOS | MOSFET Dl 60V N-Chnl UMOS | MOSFET 60V N-Chnl UMOS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | SO-8 | SOT-223-3 |
| Number of Channels | 1 Channel | 2 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 3.6 A | 3.2 A | 4.4 A |
| Rds On Drain Source Resistance | 120 mOhms | 180 mOhms | 120 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - | 1 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 10 V |
| Qg Gate Charge | 5.7 nC | - | 5.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.6 W | 2.1 W | 3.9 W |
| Configuration | Single | Dual | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.6 mm | 1.5 mm | 1.65 mm |
| Length | 4.6 mm | 5 mm | 6.7 mm |
| Series | ZXMN6A1 | ZXMN6A111 | ZXMN6A1 |
| Transistor Type | 1 N-Channel | 2 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 2.6 mm | 4 mm | 3.7 mm |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 4.9 S | - | 4.9 S |
| Fall Time | 4.6 ns | 4.6 ns | 4.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.5 ns | 3.5 ns | 3.5 ns |
| Factory Pack Quantity | 1000 | 500 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 8.2 ns | 8.2 ns | 8.2 ns |
| Typical Turn On Delay Time | 1.95 ns | 1.95 ns | 1.95 ns |
| Unit Weight | 0.004603 oz | 0.002610 oz | 0.003951 oz |