 |  | | |
| PartNumber | ZXT10P12DE6TA | ZXT10P12DE6TA(717) | ZXT10P12DE6TAPBF |
| Description | Bipolar Transistors - BJT 12V PNP SuperSOT4 | ||
| Manufacturer | Diodes Incorporated | - | GP/ZETEX |
| Product Category | Bipolar Transistors - BJT | - | IC Chips |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 12 V | - | - |
| Collector Base Voltage VCBO | - 12 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 195 mV | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 110 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | ZXT10 | - | - |
| DC Current Gain hFE Max | 300 at 10 mA, 2 V | - | - |
| Height | 1.3 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.75 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | - 3 A | - | - |
| DC Collector/Base Gain hfe Min | 300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V | - | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000229 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXT10P12DE6TA | Bipolar Transistors - BJT 12V PNP SuperSOT4 | |
| ZXT10P12DE6TC | Bipolar Transistors - BJT 12V PNP SuperSOT4 | ||
| ZXT10P12DE6TA(717) | New and Original | ||
| ZXT10P12DE6TAPBF | New and Original | ||
| ZXT10P12DE6TA | Bipolar Transistors - BJT 12V PNP SuperSOT4 |