ZXTP08

ZXTP08400BFFTA vs ZXTP08400BFF vs ZXTP08400BFFTA-CUT TAPE

 
PartNumberZXTP08400BFFTAZXTP08400BFFZXTP08400BFFTA-CUT TAPE
DescriptionBipolar Transistors - BJT PNP 400V Transistor
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23F-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 400 V--
Collector Base Voltage VCBO- 400 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 140 mV- 140 mV-
Maximum DC Collector Current- 0.2 A- 0.2 A-
Gain Bandwidth Product fT70 MHz70 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXTP08400ZXTP08400-
DC Current Gain hFE Max300300-
Height1 mm--
Length3 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 0.2 A- 0.2 A-
Pd Power Dissipation2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.001721 oz0.001721 oz-
Package Case-SOT-23-3 Flat Leads-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23F-
Power Max-1.5W-
Transistor Type-PNP-
Current Collector Ic Max-200mA-
Voltage Collector Emitter Breakdown Max-400V-
DC Current Gain hFE Min Ic Vce-100 @ 50mA, 5V-
Vce Saturation Max Ib Ic-190mV @ 40mA, 200mA-
Current Collector Cutoff Max-50nA (ICBO)-
Frequency Transition-70MHz-
Pd Power Dissipation-2 W-
Collector Emitter Voltage VCEO Max-- 400 V-
Collector Base Voltage VCBO-- 400 V-
Emitter Base Voltage VEBO-- 7 V-
DC Collector Base Gain hfe Min-100-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXTP08400BFFTA Bipolar Transistors - BJT PNP 400V Transistor
ZXTP08400BFF New and Original
ZXTP08400BFFTA-CUT TAPE New and Original
ZXTP08400BFFTA Bipolar Transistors - BJT PNP 400V Transisto
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