MRF6P18190HR6

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Vds - Drain-Source Breakdown Voltage:

68 V

Gain:

15.9 dB

Output Power:

44 W

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

NI-1230-5

Packaging:

Reel

Configuration:

Dual

Height:

5.08 mm

Length:

41.28 mm

Operating Frequency:

1.8 GHz to 1.88 GHz

Type:

RF Power MOSFET

Width:

10.29 mm

Brand:

NXP / Freescale

Channel Mode:

Enhancement

Pd - Power Dissipation:

648 W

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

150

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 0.5 V, 12 V

Vgs th - Gate-Source Threshold Voltage:

3 V

Unit Weight:

0.465355 oz

Tags

MRF6P, MRF6, MRF