IPB049N08N5ATMA1

Mfr. #:: IPB049N08N5ATMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 80V TO263-3
ライフサイクル:: メーカー新製品
データシート:: IPB049N08N5ATMA1 データシート
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詳しくは:: IPB049N08N5ATMA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

パーツエイリアス: IPB049N08N5 SP001227052

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-263-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 125 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 7 ns

立ち上がり時間: 7 ns

Vgs-Gate-Source-Voltage: +/- 20 V

Id-連続-ドレイン-電流: 80 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 80 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.2 V

Rds-On-Drain-Source-Resistance: 6.6 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 27 ns

典型的なターンオン遅延時間: 17 ns

Qg-Gate-Charge: 42 nC

フォワード-相互コンダクタンス-最小: 52 S

チャネルモード: 強化

Tags: IPB049N0, IPB049, IPB04, IPB0, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB049N08N5ATMA1 説明

***ical: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ark: Mosfet, N-Ch, 80V, 80A, To-263-3; Transistor Polarity:n Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0043Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter

IPB049N08N5ATMA1 詳しくは

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB049N08N5ATMA1 DISTI # V72:2272_06383300	Infineon Technologies AG	Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	334	75000:$0.9624 30000:$0.9724 15000:$0.9824 6000:$0.9924 3000:$1.0026 1000:$1.0128 500:$1.1045 250:$1.2104 100:$1.2521 50:$1.3485 25:$1.4984 10:$1.5510 1:$1.7777
IPB049N08N5ATMA1 DISTI # IPB049N08N5ATMA1-ND	Infineon Technologies AG	MOSFET N-CH 80V TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.2344
IPB049N08N5ATMA1 DISTI # 26195151	Infineon Technologies AG	Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	334	500:$1.1045 250:$1.2104 100:$1.2521 50:$1.5149 25:$1.5328 10:$1.5511 7:$1.7777
IPB049N08N5ATMA1 DISTI # IPB049N08N5ATMA1	Infineon Technologies AG	MV POWER MOS - Tape and Reel (Alt: IPB049N08N5ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.1149 2000:$1.0739 4000:$1.0359 6000:$1.0009 10000:$0.9829
IPB049N08N5ATMA1 DISTI # SP001227052	Infineon Technologies AG	MV POWER MOS (Alt: SP001227052) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.2629 2000:€1.0519 4000:€0.9709 6000:€0.9019 10000:€0.8419
IPB049N08N5ATMA1 DISTI # 49AC0281	Infineon Technologies AG	MOSFET, N-CH, 80V, 80A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	928	1:$2.0900 10:$1.7800 25:$1.6600 50:$1.5400 100:$1.4200 250:$1.3400 500:$1.2500
IPB049N08N5ATMA1 DISTI # 726-IPB049N08N5ATMA1	Infineon Technologies AG	MOSFET N-Ch 80V 80A D2PAK-2 RoHS: Compliant	537	1:$2.0900 10:$1.7800 100:$1.4200 500:$1.2500 1000:$1.0300
IPB049N08N5ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 80V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1000	1000:$0.8800 500:$0.9300 100:$0.9700 25:$1.0100 1:$1.0900
IPB049N08N5ATMA1 DISTI # C1S322000625598	Infineon Technologies AG	MOSFETs	334	100:$1.2521 50:$1.5149 25:$1.5328 10:$1.5511
IPB049N08N5ATMA1 DISTI # 2839449	Infineon Technologies AG	MOSFET, N-CH, 80V, 80A, TO-263-3 RoHS: Compliant	928	5:$3.6500 25:$3.1800 100:$2.6000 250:$2.1900 500:$1.9000 1000:$1.7900 5000:$1.7000
IPB049N08N5ATMA1 DISTI # 2839449	Infineon Technologies AG	MOSFET, N-CH, 80V, 80A, TO-263-3 RoHS: Compliant	928	1:£2.2400 10:£1.7000 100:£1.3500

画像	モデル	説明
	Mfr.#: IPB049N08N5ATMA1 OMO.#: OMO-IPB049N08N5ATMA1	MOSFET N-Ch 80V 80A D2PAK-2
	Mfr.#: IPB049N06L3 OMO.#: OMO-IPB049N06L3-1190	ブランドニューオリジナル
	Mfr.#: IPB049N06L3G OMO.#: OMO-IPB049N06L3G-1190	Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: IPB049N06L3GATMA1 OMO.#: OMO-IPB049N06L3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 80A TO263-3
	Mfr.#: IPB049N06L3 G OMO.#: OMO-IPB049N06L3-G-126	IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2
	Mfr.#: IPB049N08N5ATMA1 OMO.#: OMO-IPB049N08N5ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V TO263-3

IPB049N08N5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes