IPD60N10S4L12ATMA1

Mfr. #:: IPD60N10S4L12ATMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH TO252-3
ライフサイクル:: メーカー新製品
データシート:: IPD60N10S4L12ATMA1 データシート
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詳しくは:: IPD60N10S4L12ATMA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: IPD60N10

包装: リール

パーツエイリアス: IPD60N10S4L-12 IPD60N10S4L12XT SP000866550

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 94 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 21 ns

立ち上がり時間: 3 ns

Vgs-Gate-Source-Voltage: +/- 16 V

Id-連続-ドレイン-電流: 60 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 9.8 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 20 ns

典型的なターンオン遅延時間: 4 ns

Qg-Gate-Charge: 38 nC

フォワード-相互コンダクタンス-最小: -

チャネルモード: 強化

Tags: IPD60N10S4L, IPD60N1, IPD60N, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60N10S4L12ATMA1 説明

***ure Electronics: IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313

***ark: Mosfet, Aec-Q101, N-Ch, 100V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0098Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

IPD60N10S4L12ATMA1 詳しくは

75V to 100V N-Channel Automotive MOSFETs: Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8), TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.

Market price

モデル	メーカー	説明	ストック	価格
IPD60N10S4L12ATMA1 DISTI # IPD60N10S4L12ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	78In Stock	1000:$0.5940 500:$0.7524 100:$0.9702 10:$1.2280 1:$1.3900
IPD60N10S4L12ATMA1 DISTI # IPD60N10S4L12ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	78In Stock	1000:$0.5940 500:$0.7524 100:$0.9702 10:$1.2280 1:$1.3900
IPD60N10S4L12ATMA1 DISTI # IPD60N10S4L12ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.5382
IPD60N10S4L12ATMA1 DISTI # IPD60N10S4L12ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60N10S4L12ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5029 5000:$0.4849 10000:$0.4669 15000:$0.4519 25000:$0.4439
IPD60N10S4L12ATMA1 DISTI # IPD60N10S4L-12	Infineon Technologies AG	Trans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R (Alt: IPD60N10S4L-12) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
IPD60N10S4L12ATMA1 DISTI # 13AC9043	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0098ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes	4053	1000:$0.5250 500:$0.6650 250:$0.7090 100:$0.7520 50:$0.8280 25:$0.9030 10:$0.9790 1:$1.1400
IPD60N10S4L-12 DISTI # 726-IPD60N10S4L-12	Infineon Technologies AG	MOSFET N-Ch 100V 60A DPAK-2 RoHS: Compliant	8952	1:$1.1400 10:$0.9790 100:$0.7520 500:$0.6650 1000:$0.5250 2500:$0.4650 10000:$0.4480
IPD60N10S4L12ATMA1 DISTI # 726-IPD60N10S4L12ATM	Infineon Technologies AG	MOSFET N-Ch 100V 60A DPAK-2 RoHS: Compliant	2123	1:$1.1400 10:$0.9790 100:$0.7520 500:$0.6650 1000:$0.5250 2500:$0.4650 10000:$0.4480
IPD60N10S4L12ATMA1 DISTI # 2725850	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 100V, TO-252 RoHS: Compliant	6078	500:£0.5180 250:£0.5520 100:£0.5850 25:£0.7620 5:£0.8480

画像	モデル	説明
	Mfr.#: IPD60N10S4L-12 OMO.#: OMO-IPD60N10S4L-12	MOSFET N-Ch 100V 60A DPAK-2
	Mfr.#: IPD60N10S4L12ATMA1 OMO.#: OMO-IPD60N10S4L12ATMA1	MOSFET N-Ch 100V 60A DPAK-2
	Mfr.#: IPD60N10S412ATMA1 OMO.#: OMO-IPD60N10S412ATMA1	MOSFET N-CHANNEL 100+
	Mfr.#: IPD60N10S4L12ATMA1-CUT TAPE OMO.#: OMO-IPD60N10S4L12ATMA1-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: IPD60N10S4L-12 OMO.#: OMO-IPD60N10S4L-12-1190	Trans MOSFET N-CH 100V 60A
	Mfr.#: IPD60N10S412ATMA1 OMO.#: OMO-IPD60N10S412ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CHANNEL 100+
	Mfr.#: IPD60N10S4L12ATMA1 OMO.#: OMO-IPD60N10S4L12ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH TO252-3

IPD60N10S4L12ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes