PSMN3R7-100BSEJ

Product Attribute

Attribute Value

Manufacturer:

Nexperia

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

120 A

Rds On - Drain-Source Resistance:

3.95 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

246 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

405 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Nexperia

Fall Time:

69 ns

Product Type:

MOSFET

Rise Time:

64 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

98 ns

Typical Turn-On Delay Time:

40 ns

Tags

PSMN3R7, PSMN3, PSMN, PSM