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BSC886N03LS G

BSC886N03LS G
Mfr. #:
BSC886N03LS G
Manufacturer:
Infineon Technologies
Description:
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
Lifecycle:
New from this manufacturer.
Datasheet:
BSC886N03LS G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
INFINEON
Product Category
FETs - Single
Series
BSC886N03
Packaging
Reel
Part-Aliases
BSC886N03LSGATMA1 BSC886N03LSGXT SP000475950
Mounting-Style
SMD/SMT
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single Dual Drain Triple Source
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
2.5 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
3 ns
Rise-Time
3.2 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
65 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
6 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
18 ns
Typical-Turn-On-Delay-Time
4.2 ns
Channel-Mode
Enhancement
Tags
BSC886N03LSG, BSC886, BSC8, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
BSC886N03LS G
DISTI # 30579819		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 77:$0.2856
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4185In Stock
  • 1000:$0.3093
  • 500:$0.3866
  • 100:$0.5219
  • 10:$0.6770
  • 1:$0.7700
BSC886N03LSGATMA1
DISTI # BSC886N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 65A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.2533
BSC886N03LS G
DISTI # C1S322000282117		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
RoHS: Compliant		10000
  • 50:$0.2240
  • 10:$0.2630
BSC886N03LS G
DISTI # BSC886N03LS G		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC886N03LS G
    DISTI # SP000475950    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: SP000475950)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€0.3179
    • 10000:€0.2699
    • 20000:€0.2399
    • 30000:€0.2159
    • 50000:€0.2009
    BSC886N03LSGXT
    DISTI # BSC886N03LSGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 5000:$0.1959
    • 10000:$0.1889
    • 20000:$0.1819
    • 30000:$0.1759
    • 50000:$0.1729
    BSC886N03LSGATMA1
    DISTI # 97Y1253    		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power , RoHS Compliant: Yes4977
    • 1:$0.8100
    • 10:$0.7070
    • 25:$0.6530
    • 50:$0.5990
    • 100:$0.5450
    • 250:$0.4750
    • 500:$0.4040
    • 1000:$0.3230
    BSC886N03LSGInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		9609
    • 1000:$0.2500
    • 500:$0.2600
    • 100:$0.2700
    • 25:$0.2900
    • 1:$0.3100
    BSC886N03LS GInfineon Technologies AG 
    RoHS: Not Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		5000
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    BSC886N03LS G
    DISTI # 726-BSC886N03LSG    		Infineon Technologies AGMOSFET N-Ch 30V 65A TDSON-8
    RoHS: Compliant    		0
    • 1:$0.6400
    • 10:$0.5290
    • 100:$0.3420
    • 1000:$0.2730
    • 5000:$0.2310
    BSC886N03LSGInfineon Technologies AG 1500
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 1:$1.2200
      • 10:$1.0800
      • 100:$0.8260
      • 500:$0.6120
      • 1000:$0.4900
      BSC886N03LSGATMA1
      DISTI # 2617422      		Infineon Technologies AGMOSFET, N-CH, 30V, 65A, PG-TDSON-8
      RoHS: Compliant      		4977
      • 5:£0.6100
      • 25:£0.5510
      • 100:£0.4190
      • 250:£0.3650
      • 500:£0.3100
      Image Part # Description
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G

      		 MOSFET N-Ch 30V 65A TDSON-8
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1

      		 MOSFET LV POWER MOS
      BSC886N03LS

      Mfr.#: BSC886N03LS

      OMO.#: OMO-BSC886N03LS-1190

      		 New and Original
      BSC886N03LS G

      Mfr.#: BSC886N03LS G

      OMO.#: OMO-BSC886N03LS-G-1190

      		 Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R
      BSC886N03LSG

      Mfr.#: BSC886N03LSG

      OMO.#: OMO-BSC886N03LSG-1190

      		 Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC886N03LSG E8178

      Mfr.#: BSC886N03LSG E8178

      OMO.#: OMO-BSC886N03LSG-E8178-1190

      		 New and Original
      BSC886N03LSGATMA1

      Mfr.#: BSC886N03LSGATMA1

      OMO.#: OMO-BSC886N03LSGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 65A TDSON-8
      BSC886N03LSGATMA1 , TDZF

      Mfr.#: BSC886N03LSGATMA1 , TDZF

      OMO.#: OMO-BSC886N03LSGATMA1-TDZF-1190

      		 New and Original
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of BSC886N03LS G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.26
      $0.26
      10
      $0.24
      $2.42
      100
      $0.23
      $22.95
      500
      $0.22
      $108.40
      1000
      $0.20
      $204.00
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