BSC886N03LS G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TDSON-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

65 A

Rds On - Drain-Source Resistance:

6 mOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.27 mm

Length:

5.9 mm

Series:

BSC886N03

Transistor Type:

1 N-Channel

Width:

5.15 mm

Brand:

Infineon Technologies

Fall Time:

3 ns

Product Type:

MOSFET

Rise Time:

3.2 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

18 ns

Typical Turn-On Delay Time:

4.2 ns

Part # Aliases:

BSC886N03LSGATMA1 BSC886N3LSGXT SP000475950

Tags

BSC886N03LSG, BSC886, BSC8, BSC