ZXMN3F30FHTA

ZXMN3F30FHTA
Mfr. #:
ZXMN3F30FHTA
Manufacturer:
Diodes Incorporated
Description:
IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
ZXMN3F30FHTA Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMN3F30FHTA DatasheetZXMN3F30FHTA Datasheet (P4-P6)ZXMN3F30FHTA Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Diodes Incorporated
Product Category
FETs - Single
Series
ZXMN2F30
Packaging
Digi-ReelR Alternate Packaging
Unit-Weight
0.000282 oz
Mounting-Style
SMD/SMT
Package-Case
TO-236-3, SC-59, SOT-23-3
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
SOT-23-3
Configuration
Single
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
950mW
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
318pF @ 15V
FET-Feature
Logic Level Gate, 4.5V Drive
Current-Continuous-Drain-Id-25°C
3.8A (Ta)
Rds-On-Max-Id-Vgs
47 mOhm @ 3.2A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Charge-Qg-Vgs
7.7nC @ 10V
Pd-Power-Dissipation
1.4 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
2.6 ns
Rise-Time
2.6 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
4.6 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
47 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
17 ns
Typical-Turn-On-Delay-Time
1.6 ns
Channel-Mode
Enhancement
Tags
ZXMN3F30, ZXMN3F, ZXMN3, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
ZXMN3F30 Series 30 V 0.047 Ohm N-Channel Enhancement Mode MOSFET - SOT-23
***et
Trans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; On State Resistance @ Vgs = 4.5V:65mohm; On State resistance @ Vgs = 10V:47mohm; Package / Case:SOT-23; Power Dissipation Pd:1.4W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
***(Formerly Allied Electronics)
SI2366DS-T1-GE3 N-channel MOSFET Transistor; 5.8 A; 30 V; 3-Pin SOT-23
***enic
30V 5.8A 2.1W 36m´Î@10V4.5A 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***nell
MOSFET, N CH, W/D, 30V, 5.8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
***ure Electronics
N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***ure Electronics
P Channel 30 V 90 mO 1.36 W 8.2 nC Surface Mount Power MosFet - SOT-23
***ical
Trans MOSFET P-CH 30V 3.8A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, P CH, -30V, -2.5A, 0.76W; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Source Voltage Vds:-30V; On Resistance
***nell
MOSFET, P CH, -30V, -2.5A, 0.76W; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 760mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Si2336DS Series N-Channel 30 V 42 mOhm 1.25 W Surface Mount Mosfet - TO-236
***nsix Microsemi
Small Signal Field-Effect Transistor, 5.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
***ment14 APAC
MOSFET,N CH,30V,5.2A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.034ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:8V
***p One Stop Global
Trans MOSFET N-CH 30V 3.3A Automotive 3-Pin SOT-23 T/R
***ark
Mosfet, N-Ch, 30V, 2.5A, Sot-23 Rohs Compliant: Yes
***(Formerly Allied Electronics)
N-Channel Enhancement MOSFET SOT-23
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
***ment14 APAC
MOSFET, N-CH, 30V, 2.5A, SOT-23;
*** Stop Electro
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 30V 4.2A 3-Pin SOT-23 T/R
***S
French Electronic Distributor since 1988
***ment14 APAC
MOSFET,N CH,30V,4.9A,DIODE,SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.2A; Power Dissipation Pd:1.3W; Voltage Vgs Max:8V
Part # Mfg. Description Stock Price
ZXMN3F30FHTA
DISTI # 26572882
Zetex / Diodes IncTrans MOSFET N-CH 30V 4.6A Automotive 3-Pin SOT-23 T/R
RoHS: Compliant
288000
  • 3000:$0.1038
ZXMN3F30FHTA
DISTI # ZXMN3F30FHCT-ND
Diodes IncorporatedMOSFET N-CH 30V 3.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
14961In Stock
  • 1000:$0.2070
  • 500:$0.2620
  • 100:$0.3500
  • 10:$0.4600
  • 1:$0.5400
ZXMN3F30FHTA
DISTI # ZXMN3F30FHDKR-ND
Diodes IncorporatedMOSFET N-CH 30V 3.8A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
14961In Stock
  • 1000:$0.2070
  • 500:$0.2620
  • 100:$0.3500
  • 10:$0.4600
  • 1:$0.5400
ZXMN3F30FHTA
DISTI # ZXMN3F30FHTR-ND
Diodes IncorporatedMOSFET N-CH 30V 3.8A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 3000:$0.1850
ZXMN3F30FHTA
DISTI # ZXMN3F30FHTA
Diodes IncorporatedTrans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R (Alt: ZXMN3F30FHTA)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 12000
  • 3000:€0.1139
  • 6000:€0.1139
  • 12000:€0.1139
  • 18000:€0.1129
  • 30000:€0.1129
ZXMN3F30FHTA
DISTI # ZXMN3F30FHTA
Diodes IncorporatedTrans MOSFET N-CH 30V 4.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: ZXMN3F30FHTA)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1249
  • 6000:$0.1189
  • 12000:$0.1129
  • 18000:$0.1079
  • 30000:$0.1059
ZXMN3F30FHTA
DISTI # 08N2757
Diodes IncorporatedMOSFET, N CHANNEL, 30V, 4.6A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes495
  • 1000:$0.1660
  • 500:$0.1820
  • 250:$0.1980
  • 100:$0.2140
  • 50:$0.2600
  • 25:$0.3050
  • 10:$0.3510
  • 1:$0.4300
ZXMN3F30FHTA
DISTI # 70438832
Diodes IncorporatedMOSFET N-Channel 30V 4.6A SOT23
RoHS: Compliant
0
  • 125:$0.2000
  • 250:$0.1800
  • 500:$0.1600
  • 1250:$0.1400
ZXMN3F30FHTA
DISTI # 522-ZXMN3F30FHTA
Diodes IncorporatedMOSFET 30V N-Channel Enhance. Mode MOSFET
RoHS: Compliant
11244
  • 1:$0.4200
  • 10:$0.3510
  • 100:$0.2140
  • 1000:$0.1660
  • 3000:$0.1410
ZXMN3F30FHTADiodes IncorporatedZXMN3F30 Series 30 V 0.047 Ohm N-Channel Enhancement Mode MOSFET - SOT-23
RoHS: Compliant
188Cut Tape/Mini-Reel
  • 1:$0.2550
  • 100:$0.1790
  • 250:$0.1660
  • 500:$0.1570
  • 1500:$0.1370
ZXMN3F30FHTADiodes Incorporated 400
  • 397:$0.4036
  • 100:$0.5045
  • 1:$1.0090
ZXMN3F30FHTA
DISTI # 7082539
Zetex / Diodes IncMOSFET N-CHANNEL 30V 4.6A SOT23, PK1700
  • 150:£0.1480
  • 25:£0.2450
ZXMN3F30FHTA
DISTI # 7082539P
Zetex / Diodes IncMOSFET N-CHANNEL 30V 4.6A SOT23, RL5600
  • 150:£0.1480
ZXMN3F30FHTA
DISTI # ZXMN3F30FHTA
Diodes IncorporatedTransistor: N-MOSFET,unipolar,30V,3.7A,0.95W,SOT232509
  • 3:$0.1994
  • 25:$0.1801
  • 100:$0.1586
  • 500:$0.1427
  • 3000:$0.1337
ZXMN3F30FHTAZetex / Diodes Inc 
RoHS: Compliant
Europe - 1265
    ZXMN3F30FHTAZetex / Diodes Inc 466
      ZXMN3F30FHTA
      DISTI # XSKDRABS0027457
      DIODES INCORPORATED 
      RoHS: Compliant
      18000
      • 18000:$0.1508
      • 3000:$0.1616
      ZXMN3F30FHTA
      DISTI # XSFP00000014209
      Diodes IncorporatedThree Terminal VoltageReference,1Output,2.495V,Trim/Adjustable, BIPolar,PDSO3
      RoHS: Compliant
      9000
      • 9000:$0.2582
      • 3000:$0.2840
      ZXMN3F30FHTA
      DISTI # 1583667
      Diodes IncorporatedMOSFET, N, SOT-23
      RoHS: Compliant
      505
      • 500:£0.1240
      • 250:£0.1400
      • 100:£0.1550
      • 25:£0.2570
      • 5:£0.3160
      ZXMN3F30FHTA
      DISTI # 1583667
      Diodes IncorporatedMOSFET, N, SOT-23
      RoHS: Compliant
      495
      • 250:$0.2960
      • 100:$0.3500
      • 25:$0.4300
      • 5:$0.4930
      Image Part # Description
      ZXMN3F31DN8TA

      Mfr.#: ZXMN3F31DN8TA

      OMO.#: OMO-ZXMN3F31DN8TA

      MOSFET 30V Dual N-channel Enhance. Mode MOSFET
      ZXMN3F30FGTA

      Mfr.#: ZXMN3F30FGTA

      OMO.#: OMO-ZXMN3F30FGTA-1190

      DIIZXMN3F30FGTA (Alt: ZXMN3F30FGTA)
      ZXMN3F318DN8TA

      Mfr.#: ZXMN3F318DN8TA

      OMO.#: OMO-ZXMN3F318DN8TA-1190

      New and Original
      ZXMN3F31DN8TC

      Mfr.#: ZXMN3F31DN8TC

      OMO.#: OMO-ZXMN3F31DN8TC-1190

      New and Original
      ZXMN3F30FHTA-CUT TAPE

      Mfr.#: ZXMN3F30FHTA-CUT TAPE

      OMO.#: OMO-ZXMN3F30FHTA-CUT-TAPE-1190

      New and Original
      ZXMN3F31DN8TA

      Mfr.#: ZXMN3F31DN8TA

      OMO.#: OMO-ZXMN3F31DN8TA-DIODES

      IGBT Transistors MOSFET 30V Dual N-channel Enhance. Mode MOSFET
      ZXMN3F30FHTA

      Mfr.#: ZXMN3F30FHTA

      OMO.#: OMO-ZXMN3F30FHTA-DIODES

      IGBT Transistors MOSFET 30V N-Channel Enhance. Mode MOSFET
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of ZXMN3F30FHTA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.16
      $0.16
      10
      $0.15
      $1.48
      100
      $0.14
      $14.01
      500
      $0.13
      $66.15
      1000
      $0.12
      $124.60
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