DF900R12IP4DBOSA1

Mfr. #:: DF900R12IP4DBOSA1
メーカー:: Infineon Technologies
説明:: PRIMPACK IGBT MOD VCE 1200V 900A
ライフサイクル:: メーカー新製品
データシート:: DF900R12IP4DBOSA1 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: DF900R12IP4D, DF900, DF90, DF9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DF900R12IP4DBOSA1 説明

***ical: Trans IGBT Module N-CH 1200V 900A 5100000mW Automotive 10-Pin PRIME2-1 Tray

***ure Electronics: DF900R12IP4D Series 1200 V 900 A Chassis Mount IGBT Module

***et Europe: IGBT Module N-CH 1200V 900A 10-pin PRIME2-1

***i-Key: PRIMPACK IGBT MOD VCE 1200V 900A

***omponent: Infineon power module

***ark: IGBT Module; Module Configuration:Chopper; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:5.1kW; No. of Pins:10; Collector Emitter Saturation Voltage Vce(sat):1.7V;RoHS Compliant: Yes

***nell: IGBT,HIG POW,CHOP MOD NTC,1200V,900A; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Max:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; No. of Pins:10

***ment14 APAC: IGBT, HIG POW, 1200V, 900A; Module Configuration:Single; Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:10; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:5.1kW

***ineon: 1200V PrimePACK2 chopper IGBT module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC. | Summary of Features: Extended Operation Temperature T(tvj op); High DC Stability; High Short Circuit Capability, Self Limiting Short Circuit Current; V(cesat) with positive Temperature Coefficient; Low V(cesat); 4kV AC 1min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; High Power and Thermal Cycling Capability; Substrate for Low Thermal Resistance; UL recognized | Benefits: High Power Density; Standardized housing | Target Applications: drives; wind; solar; cav; ups

Market price

モデル	メーカー	説明	ストック	価格
DF900R12IP4DBOSA1 DISTI # V99:2348_18206068	Infineon Technologies AG	IGBT Power Module	6	100:$471.0300 25:$510.0300 10:$566.7000 1:$629.6700
DF900R12IP4DBOSA1 DISTI # DF900R12IP4DBOSA1-ND	Infineon Technologies AG	PRIMPACK IGBT MOD VCE 1200V 900A RoHS: Not compliant Min Qty: 3 Container: Bulk	Temporarily Out of Stock	3:$454.8267
DF900R12IP4DBOSA1 DISTI # 26198763	Infineon Technologies AG	IGBT Power Module	6	1:$629.6700
DF900R12IP4DBOSA1 DISTI # 31918213	Infineon Technologies AG	IGBT Power Module	3	3:$623.3906
DF900R12IP4DBOSA1 DISTI # DF900R12IP4DBOSA1	Infineon Technologies AG	IGBT Module N-CH 1200V 900A 10-pin PRIME2-1 - Trays (Alt: DF900R12IP4DBOSA1) RoHS: Compliant Min Qty: 3 Container: Tray	Americas - 0	30:$411.9900 18:$422.0900 12:$432.7900 6:$444.0900 3:$449.8900
DF900R12IP4DBOSA1	Infineon Technologies AG	DF900R12IP4D Series 1200 V 900 A Chassis Mount IGBT Module RoHS: Compliant	3Tray	3:$379.9700
DF900R12IP4D DISTI # 641-DF900R12IP4D	Infineon Technologies AG	IGBT Modules IGBT MODULES 1200V 900A	3	1:$461.7000 5:$433.8700
DF900R12IP4DBOSA1 DISTI # XSFT00000030607	Infineon Technologies AG	DF900R12IP4D SERIES 1200 V 900 A CHASSIS MOUNT IGBTMODULE RoHS: Compliant	6 in Stock0 on Order	3:$719.9400

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