QS6J11TR

Mfr. #:: QS6J11TR
Manufacturer:: Rohm Semiconductor
Description:: IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN
Lifecycle:: New from this manufacturer.
Datasheet:: QS6J11TR Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Rohm Semiconductor

Product Category: FETs - Arrays

Series: QS6J11

Packaging: Digi-ReelR Alternate Packaging

Mounting-Style: SMD/SMT

Package-Case: SC-74, SOT-457

Technology: Si

Operating-Temperature: 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 2 Channel

Supplier-Device-Package: TSMT6

Configuration: Dual

FET-Type: 2 P-Channel (Dual)

Power-Max: 600mW

Transistor-Type: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 12V

Input-Capacitance-Ciss-Vds: 770pF @ 6V

FET-Feature: Logic Level Gate

Current-Continuous-Drain-Id-25°C: 2A

Rds-On-Max-Id-Vgs: 105 mOhm @ 2A, 4.5V

Vgs-th-Max-Id: 1V @ 1mA

Gate-Charge-Qg-Vgs: 6.5nC @ 4.5V

Pd-Power-Dissipation: 600 mW

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 35 ns

Rise-Time: 17 ns

Vgs-Gate-Source-Voltage: 10 V

Id-Continuous-Drain-Current: 2 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Rds-On-Drain-Source-Resistance: 75 mOhms

Transistor-Polarity: P-Channel

Typical-Turn-Off-Delay-Time: 65 ns

Typical-Turn-On-Delay-Time: 10 ns

Qg-Gate-Charge: 6.5 nC

Forward-Transconductance-Min: 2 S

Channel-Mode: Enhancement

Tags: QS6J11, QS6J1, QS6J, QS6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QS6J11TR Description

***et: Transistor MOSFET Array Dual P-CH 12V 2A 6-Pin SOT-457T Emboss T/R

*** Source Electronics: Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R / MOSFET 2P-CH 12V 2A TSMT6

***ronik: P+P CHANNEL MOS 2A 12V TSMT6

***Yang: Transistor MOSFET Array Dual P-CH 12V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ

***ment14 APAC: MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

***ical: Trans MOSFET N/P-CH 30V/12V 2.4A/2.5A 6-Pin SuperSOT T/R

***Yang: 12V, P-CH MOSFET,30V, SYNCFET, POWER TRENCH, SSOT6 - Bulk

***ser: MOSFETs 12V P-Channel PowerTrench

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

***eco: Transistor MOSFET P-Channel 20 Volt 3.5A 6-Pin SuperSOT

***ure Electronics: P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6

***rchild Semiconductor: This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications.

***el Electronic: Chip Resistor - Surface Mount 10kOhms 0402 (1005 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 10K OHM 5% 1/5W 0402

***nell: MOSFET P CH 20V 3.5A SSOT6; Transistor Polarity: P Channel; Continuous Drain Current Id: -3.5A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.6W; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -3.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V

***Yang: Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes

***rchild Semiconductor: These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

***p One Stop Global: Trans MOSFET P-CH 30V 3.9A Automotive 6-Pin TSOT-26 T/R

***ure Electronics: P-Channel 30 V 105 mOhm Surface Mount Enhancement Mode Mosfet - TSOT-26

***(Formerly Allied Electronics): 30V P-Channel Enhancement MOSFET TSOT-26

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 12±V VGS

***S: French Electronic Distributor since 1988

***ure Electronics: ZXMP6A17E6Q Series 60 V 2.3 A P-Channel Enhancement Mode Mosfet - SOT-23-6

***ical: Trans MOSFET P-CH 60V 2.3A Automotive 6-Pin SOT-26 T/R

***ark: Mosfet Bvdss: 41V~60V Sot26 T&r 3K Rohs Compliant: Yes

***des Inc SCT: P-CHANNEL ENHANCEMENT MODE MOSFET, 60V VDS, 20±V VGS

***nell: MOSFET, AEC-Q101, P CH, -60V, SOT-26; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.3A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.1W; Transistor Case Style: SOT-26; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
QS6J11TR DISTI # 30719429	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R RoHS: Compliant	5785	1000:$0.2818 500:$0.3022 100:$0.3672 50:$0.4411 43:$0.6044
QS6J11TR DISTI # QS6J11CT-ND	ROHM Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8240In Stock	1000:$0.2416 500:$0.3127 100:$0.3980 10:$0.5330 1:$0.6200
QS6J11TR DISTI # QS6J11DKR-ND	ROHM Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8240In Stock	1000:$0.2416 500:$0.3127 100:$0.3980 10:$0.5330 1:$0.6200
QS6J11TR DISTI # QS6J11TR-ND	ROHM Semiconductor	MOSFET 2P-CH 12V 2A TSMT6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.2139
QS6J11TR DISTI # QS6J11TR	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R - Tape and Reel (Alt: QS6J11TR) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 3000
QS6J11TR DISTI # QS6J11TR	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1229 18000:€0.1319 12000:€0.1559 6000:€0.1909 3000:€0.2459
QS6J11TR DISTI # QS6J11TR	ROHM Semiconductor	Trans MOSFET P-CH 12V 2A 6-Pin TSMT T/R (Alt: QS6J11TR) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
QS6J11TR DISTI # 755-QS6J11TR	ROHM Semiconductor	MOSFET TRANS MOSFET PCH 12V 2A 6PIN RoHS: Compliant	5780	1:$0.6000 10:$0.4990 100:$0.3040 1000:$0.2350 3000:$0.2300
QS6J11TR DISTI # TMOSS6472	ROHM Semiconductor	P+P CHANNEL MOS 2A 12V TSMT6 RoHS: Compliant	Stock DE - 9000Stock HK - 0Stock US - 0	3000:$0.2120 6000:$0.1999 9000:$0.1878 12000:$0.1696 18000:$0.1636
QS6J11TR	ROHM Semiconductor		3000	1:¥4.6262 100:¥2.6231 1500:¥1.6630 3000:¥1.2390
QS6J11TR	ROHM Semiconductor	MOSFET TRANS MOSFET PCH 12V 2A 6PIN RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: QS6J3TR OMO.#: OMO-QS6J3TR	MOSFET 2P-CH 20V 1.5A
	Mfr.#: QS6J1 OMO.#: OMO-QS6J1-1190	New and Original
	Mfr.#: QS6J1 , LM317MKTPRG3 OMO.#: OMO-QS6J1-LM317MKTPRG3-1190	New and Original
	Mfr.#: QS6J1 TR OMO.#: OMO-QS6J1-TR-1190	New and Original
	Mfr.#: QS6J11 TR OMO.#: OMO-QS6J11-TR-1190	New and Original
	Mfr.#: QS6J3 OMO.#: OMO-QS6J3-1190	New and Original
	Mfr.#: QS6J3 TR OMO.#: OMO-QS6J3-TR-1190	New and Original
	Mfr.#: QS6J1TR OMO.#: OMO-QS6J1TR-ROHM-SEMI	MOSFET 2P-CH 20V 1.5A TSMT6
	Mfr.#: QS6J3TR OMO.#: OMO-QS6J3TR-ROHM-SEMI	MOSFET 2P-CH 20V 1.5A TSMT6
	Mfr.#: QS6J11TR OMO.#: OMO-QS6J11TR-ROHM-SEMI	IGBT Transistors MOSFET TRANS MOSFET PCH 12V 2A 6PIN

QS6J11TR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes