BSC009NE2LS5ATMA1

Mfr. #:: BSC009NE2LS5ATMA1
メーカー:: Infineon Technologies
説明:: MOSFET LV POWER MOS
ライフサイクル:: メーカー新製品
データシート:: BSC009NE2LS5ATMA1 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: BSC009NE2LS5ATMA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

パーツエイリアス: BSC009NE2LS5 SP001212764

取り付けスタイル: SMD / SMT

パッケージ-ケース: TDSON-8

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

Pd-電力損失: 74 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 4 ns

立ち上がり時間: 6 ns

Vgs-Gate-Source-Voltage: +/- 16 V

Id-連続-ドレイン-電流: 100 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 25 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.2 V

Rds-On-Drain-Source-Resistance: 1.25 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 30 ns

典型的なターンオン遅延時間: 4 ns

Qg-Gate-Charge: 20 nC

フォワード-相互コンダクタンス-最小: 75 S

チャネルモード: 強化

Tags: BSC009NE2LS5, BSC009, BSC00, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC009NE2LS5ATMA1 説明

***ure Electronics: Single N-Channel 25 V 0.9 mOhm 43 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R

***Components: On a Reel of 5000, Infineon BSC009NE2LS5ATMA1 MOSFET

***ronik: N-CH 25V 100A 900mOhm SuperSO8

***ineon: With the new OptiMOS 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Highest power density with S3O8 or Power Block package; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse

BSC009NE2LS5ATMA1 詳しくは

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

モデル	メーカー	説明	ストック	価格
BSC009NE2LS5ATMA1 DISTI # V72:2272_06383674	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	479	250:$1.0397 100:$1.1552 25:$1.2967 10:$1.4408 1:$1.8652
BSC009NE2LS5ATMA1 DISTI # V36:1790_06383674	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	0
BSC009NE2LS5ATMA1 DISTI # BSC009NE2LS5ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	186In Stock	1000:$0.9571 500:$1.1552 100:$1.4060 10:$1.7490 1:$1.9500
BSC009NE2LS5ATMA1 DISTI # BSC009NE2LS5ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	186In Stock	1000:$0.9571 500:$1.1552 100:$1.4060 10:$1.7490 1:$1.9500
BSC009NE2LS5ATMA1 DISTI # BSC009NE2LS5ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 25V 41A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	10000:$0.8156 5000:$0.8331
BSC009NE2LS5ATMA1 DISTI # 33368664	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	5000	5000:$0.8408
BSC009NE2LS5ATMA1 DISTI # 30729226	Infineon Technologies AG	Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R RoHS: Compliant	479	500:$1.0169 250:$1.0397 100:$1.1552 25:$1.2967 10:$1.4408 9:$1.6957
BSC009NE2LS5ATMA1 DISTI # BSC009NE2LS5ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC009NE2LS5ATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.7399 30000:$0.7529 20000:$0.7789 10000:$0.8089 5000:$0.8389
BSC009NE2LS5ATMA1 DISTI # SP001212764	Infineon Technologies AG	Trans MOSFET N-CH 25V 100A 8-Pin TDSON T/R (Alt: SP001212764) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.6629 30000:€0.7139 20000:€0.7729 10000:€0.8439 5000:€1.0309
BSC009NE2LS5ATMA1 DISTI # 13AC8322	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):750µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power DissipationRoHS Compliant: Yes	10401	1000:$0.8530 500:$1.0300 250:$1.1000 100:$1.1700 50:$1.2700 25:$1.3700 10:$1.4600 1:$1.7300
BSC009NE2LS5ATMA1 DISTI # 726-BSC009NE2LS5ATMA	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$1.7100 10:$1.4500 100:$1.1600 500:$1.0200 1000:$0.8450 2500:$0.7870 5000:$0.7580 10000:$0.7290
BSC009NE2LS5ATMA1 DISTI # 1336576	Infineon Technologies AG	MOSFET OPTIMOS5 25V 100A 0.9M SUPERSO8, RL	8265	15000:£0.6170 5000:£0.6430
BSC009NE2LS5ATMA1 DISTI # 2725799	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant	10401	1000:$1.4600 500:$1.7600 100:$2.2600 10:$2.8100 1:$3.1100
BSC009NE2LS5ATMA1 DISTI # 2725799	Infineon Technologies AG	MOSFET, N-CH, 25V, 100A, TDSON	10401	500:£0.7000 250:£0.7470 100:£0.7940 25:£0.9990 5:£1.1000

画像	モデル	説明
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5IATMA1 OMO.#: OMO-BSC009NE2LS5IATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LSXT OMO.#: OMO-BSC009NE2LSXT	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS OMO.#: OMO-BSC009NE2LS-1190	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC009NE2LS5I OMO.#: OMO-BSC009NE2LS5I-1190	ブランドニューオリジナル
	Mfr.#: BSC009NE2LSATMA1 OMO.#: OMO-BSC009NE2LSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 41A TDSON-8
	Mfr.#: BSC009NE2LS5IATMA1 OMO.#: OMO-BSC009NE2LS5IATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS
	Mfr.#: BSC009NE2LS5ATMA1 OMO.#: OMO-BSC009NE2LS5ATMA1-INFINEON-TECHNOLOGIES	MOSFET LV POWER MOS

BSC009NE2LS5ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes