IPN60R600P7SATMA1

Mfr. #:: IPN60R600P7SATMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CHANNEL 600V 6A SOT223
ライフサイクル:: メーカー新製品
データシート:: IPN60R600P7SATMA1 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: IPN60R600P7SATMA1 詳しくは

製品属性
属性値

Tags: IPN60, IPN6, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN60R600P7SATMA1 説明

***ure Electronics: Single N-Channel 600 V 600 mOhm 9 nC CoolMOS Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 600V 6A 3-Pin(2+Tab) SOT-223 T/R

***i-Key: MOSFET N-CHANNEL 600V 6A SOT223

***ark: Mosfet, N-Ch, 600V, 6A, 7W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.49Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 6A, 7W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.49ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:7W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CAN N, 600V, 6A, 7W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.49ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:7W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

IPN60R600P7SATMA1 詳しくは

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

モデル	メーカー	説明	ストック	価格
IPN60R600P7SATMA1 DISTI # V36:1790_18204913	Infineon Technologies AG	Trans MOSFET N-CH 600V 6A T/R	0	3000000:$0.2262 1500000:$0.2265 300000:$0.2492 30000:$0.2890 3000:$0.2957
IPN60R600P7SATMA1 DISTI # IPN60R600P7SATMA1TR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 600V 6A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.2583 15000:$0.2651 6000:$0.2753 3000:$0.2957
IPN60R600P7SATMA1 DISTI # IPN60R600P7SATMA1CT-ND	Infineon Technologies AG	MOSFET N-CHANNEL 600V 6A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3361 500:$0.4201 100:$0.5314 10:$0.6930 1:$0.7900
IPN60R600P7SATMA1 DISTI # IPN60R600P7SATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 600V 6A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3361 500:$0.4201 100:$0.5314 10:$0.6930 1:$0.7900
IPN60R600P7SATMA1 DISTI # IPN60R600P7SATMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPN60R600P7SATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.2459 18000:$0.2509 12000:$0.2589 6000:$0.2689 3000:$0.2789
IPN60R600P7SATMA1 DISTI # SP001681930	Infineon Technologies AG	CONSUMER (Alt: SP001681930) RoHS: Compliant Min Qty: 3000	Europe - 0	30000:€0.2309 18000:€0.2479 12000:€0.2689 6000:€0.2939 3000:€0.3589
IPN60R600P7SATMA1 DISTI # IPN60R600P7S	Infineon Technologies AG	CONSUMER (Alt: IPN60R600P7S) RoHS: Compliant Min Qty: 3000	Asia - 0	150000:$0.2458 75000:$0.2490 30000:$0.2522 15000:$0.2555 9000:$0.2624 6000:$0.2697 3000:$0.2774
IPN60R600P7SATMA1 DISTI # 93AC7119	Infineon Technologies AG	MOSFET, N-CH, 600V, 6A, 7W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	2673	1000:$0.3140 500:$0.3400 250:$0.3670 100:$0.3930 50:$0.4650 25:$0.5360 10:$0.6080 1:$0.7270
IPN60R600P7SATMA1 DISTI # 726-IPN60R600P7SATMA	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0	1:$0.7200 10:$0.6020 100:$0.3890 1000:$0.3110 3000:$0.2630 9000:$0.2530 24000:$0.2430
IPN60R600P7SATMA1 DISTI # 2986471	Infineon Technologies AG	MOSFET, N-CH, 600V, 6A, 7W, SOT-223	2568	100:£0.3790 10:£0.6480 1:£0.8030
IPN60R600P7SATMA1 DISTI # 2986471	Infineon Technologies AG	MOSFET, N-CH, 600V, 6A, 7W, SOT-223 RoHS: Compliant	2623	100:$0.5690 25:$0.9100 5:$0.9900

IPN60R600P7SATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes