IKA08N65F5XKSA1

Mfr. #:: IKA08N65F5XKSA1
メーカー:: Infineon Technologies
説明:: IGBT Transistors IGBT PRODUCTS
ライフサイクル:: メーカー新製品
データシート:: IKA08N65F5XKSA1 データシート
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詳しくは:: IKA08N65F5XKSA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: IGBT-シングル

シリーズ: TrenchStopR

包装: チューブ

パーツエイリアス: IKA08N65F5 SP000973414

単位重量: 0.211644 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-220-3

入力方式: 標準

取付タイプ: スルーホール

サプライヤー-デバイス-パッケージ: PG-TO-220-3

構成: 独身

パワーマックス: 31.2W

Reverse-Recovery-Time-trr: 41ns

Current-Collector-Ic-Max: 10.8A

電圧-コレクタ-エミッタ-故障-最大: 650V

IGBTタイプ: -

Current-Collector-Pulsed-Icm: 24A

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 8A

スイッチング-エネルギー: 70μJ (on), 20μJ (off)

ゲートチャージ: 22nC

Td-on-off-25°C: 10ns/116ns

テスト条件: 400V, 4A, 48 Ohm, 15V

Pd-電力損失: 31.2 W

最高作動温度: + 175 C

最低作動温度: - 40 C

コレクター-エミッター-電圧-VCEO-マックス: 650 V

コレクター-エミッター-飽和-電圧: 1.6 V

連続-コレクター-電流-at-25-C: 10.8 A

ゲート-エミッタ-リーク-電流: 100 nA

最大ゲート-エミッタ-電圧: 20 V

連続-コレクタ-電流-Ic-Max: 6.8 A

Tags: IKA08N65F, IKA08, IKA0, IKA

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKA08N65F5XKSA1 説明

***ical: Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube

***p One Stop Japan: Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP

***et Europe: Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube

***ark: Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3

***i-Key: IGBT 650V 10.8A 31.2W TO220-3

***ronik: IGBT 650V 8A 1,6V TO220FP-3

***ment14 APAC: IGBT, 650V, 8A, TO220-3

***ukat: 650V 10,8A 31,2W TO220-Fullpak

***nell: IGBT, 650V, 8A, TO220-3; Corrente di Collettore CC:8A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:31.2W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IKA08N65F5XKSA1 詳しくは

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

モデル	メーカー	説明	ストック	価格
IKA08N65F5XKSA1 DISTI # IKA08N65F5XKSA1-ND	Infineon Technologies AG	IGBT 650V 10.8A 31.2W TO220-3 RoHS: Compliant Min Qty: 1 Container: Tube	416In Stock	1000:$0.8803 500:$1.0624 100:$1.2931 10:$1.6090 1:$1.7900
IKA08N65F5XKSA1 DISTI # IKA08N65F5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65F5XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$1.0199 1000:$0.9829 2000:$0.9469 3000:$0.9159 5000:$0.8989
IKA08N65F5XKSA1 DISTI # SP000973414	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP000973414) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.1109 10:€1.0099 25:€0.9259 50:€0.8879 100:€0.8539 500:€0.8229 1000:€0.7929
IKA08N65F5XKSA1 DISTI # 726-IKA08N65F5XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	387	1:$1.7100 10:$1.4500 100:$1.1600 500:$1.0200 1000:$0.8390 2500:$0.7810 5000:$0.7520 10000:$0.7230
IKA08N65F5 DISTI # 726-IKA08N65F5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	489	1:$1.7400 10:$1.4800 100:$1.1900 500:$1.0400 1000:$0.8600 2500:$0.8000 5000:$0.7700 10000:$0.7400
IKA08N65F5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	500	1000:$0.9400 500:$0.9900 100:$1.0300 25:$1.0800 1:$1.1600
IKA08N65F5XKSA1 DISTI # IKA08N65F5	Infineon Technologies AG	650V 10,8A 31,2W TO220-Fullpak RoHS: Compliant	345	1:€4.9400 10:€1.9400 50:€0.9400 100:€0.8600
IKA08N65F5XKSA1 DISTI # 2363281	Infineon Technologies AG	IGBT, 650V, 8A, TO220-3 RoHS: Compliant	0	5:£1.1900 25:£1.0900 100:£0.8780 250:£0.8250 500:£0.7720

画像	モデル	説明
	Mfr.#: IKA08N65H5 OMO.#: OMO-IKA08N65H5	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKA08N65F5XKSA1 OMO.#: OMO-IKA08N65F5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKA08N65H5XKSA1 OMO.#: OMO-IKA08N65H5XKSA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKA08N65F5 OMO.#: OMO-IKA08N65F5	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
	Mfr.#: IKA08N65ET6XKSA1 OMO.#: OMO-IKA08N65ET6XKSA1	IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
	Mfr.#: IKA08N65ET6XKSA1 OMO.#: OMO-IKA08N65ET6XKSA1-INFINEON-TECHNOLOGIES	HOME APPLIANCES 14
	Mfr.#: IKA08N65F5 OMO.#: OMO-IKA08N65F5-1190	Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP
	Mfr.#: IKA08N65F5/H5 OMO.#: OMO-IKA08N65F5-H5-1190	ブランドニューオリジナル
	Mfr.#: IKA08N65H5 OMO.#: OMO-IKA08N65H5-1190	- Bulk (Alt: IKA08N65H5)
	Mfr.#: IKA08N65H5XKSA1 OMO.#: OMO-IKA08N65H5XKSA1-INFINEON-TECHNOLOGIES	IGBT Transistors IGBT PRODUCTS

IKA08N65F5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes