DMN61D9UWQ-7

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

Technology:

Si

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

340 mA

Rds On - Drain-Source Resistance:

1.2 Ohms

Vgs th - Gate-Source Threshold Voltage:

500 mV

Vgs - Gate-Source Voltage:

5 V

Qg - Gate Charge:

400 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

440 mW

Configuration:

Single

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Forward Transconductance - Min:

200 mS

Fall Time:

8.4 ns

Product Type:

MOSFET

Rise Time:

1.8 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

14.4 ns

Typical Turn-On Delay Time:

2.1 ns

Tags

DMN61D9UW, DMN61D9, DMN61D, DMN61, DMN6, DMN