SSM6G18NU,LF

Product Attribute

Attribute Value

Manufacturer:

Toshiba

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

UDFN-6

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

2 A

Rds On - Drain-Source Resistance:

112 mOhms

Vgs th - Gate-Source Threshold Voltage:

0.3 V

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

4.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 P-Channel

Brand:

Toshiba

Product Type:

MOSFET

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

43 ns

Typical Turn-On Delay Time:

17 ns

Tags

SSM6G, SSM6, SSM