 |  | | |
| PartNumber | SSM6G18NU,LF | SSM6G13NU | SSM6G18NU |
| Description | MOSFET Small Signal MOSFET P-ch + SBD VDSS=-20V, VR=30V, I(SBD)=1A, VGSS=+/-8V, ID=-2A, RDS(ON)=0.112O @ 4.5V, in UDFN6 package | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | UDFN-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2 A | - | - |
| Rds On Drain Source Resistance | 112 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 0.3 V | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 4.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 43 ns | - | - |
| Typical Turn On Delay Time | 17 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
SSM6G18NU,LF | MOSFET Small Signal MOSFET P-ch + SBD VDSS=-20V, VR=30V, I(SBD)=1A, VGSS=+/-8V, ID=-2A, RDS(ON)=0.112O @ 4.5V, in UDFN6 package | |
| SSM6G13NU | New and Original | ||
| SSM6G18NU | New and Original |