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SI2314EDS-T1-GE3

SI2314EDS-T1-GE3
Mfr. #:
SI2314EDS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
Lifecycle:
New from this manufacturer.
Datasheet:
SI2314EDS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2314EDS-T1-GE3 DatasheetSI2314EDS-T1-GE3 Datasheet (P4-P6)SI2314EDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
More Information:
SI2314EDS-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI2
Brand:
Vishay / Siliconix
Product Type:
MOSFET
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Part # Aliases:
SI2314EDS-GE3
Unit Weight:
0.000282 oz
Tags
SI2314E, SI2314, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 20V 3.77A SOT23-3
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3.77A; Drain Source Voltage Vds:20V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:950mV; Power Dissipation Pd:750mW ;RoHS Compliant: Yes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2314EDS-T1-GE3
DISTI # SI2314EDS-T1-GE3-ND		Vishay SiliconixMOSFET N-CH 20V 3.77A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.3350
SI2314EDS-T1-GE3
DISTI # SI2314EDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2314EDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3049
  • 6000:$0.2959
  • 12000:$0.2839
  • 18000:$0.2759
  • 30000:$0.2689
SI2314EDS-T1-GE3
DISTI # 781-SI2314EDS-GE3		Vishay IntertechnologiesMOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.3050
SI2314EDS-T1-GE3Vishay Intertechnologies 3000
    Image Part # Description
    SI2314EDS-T1-E3

    Mfr.#: SI2314EDS-T1-E3

    OMO.#: OMO-SI2314EDS-T1-E3

    		 MOSFET N-CHANNEL 20-V (D-S) MOSFET
    SI2314EDS-T1-GE3

    Mfr.#: SI2314EDS-T1-GE3

    OMO.#: OMO-SI2314EDS-T1-GE3

    		 MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
    SI2314EDS

    Mfr.#: SI2314EDS

    OMO.#: OMO-SI2314EDS-1190

    		 New and Original
    SI2314EDS-T1-E3

    Mfr.#: SI2314EDS-T1-E3

    OMO.#: OMO-SI2314EDS-T1-E3-VISHAY

    		 MOSFET N-CH 20V 3.77A SOT23-3
    SI2314EDS-T1-GE3

    Mfr.#: SI2314EDS-T1-GE3

    OMO.#: OMO-SI2314EDS-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of SI2314EDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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