IPP60R120C7XKSA1

Mfr. #:: IPP60R120C7XKSA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 600V 19A TO220-3
ライフサイクル:: メーカー新製品
データシート:: IPP60R120C7XKSA1 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: IPP60R120C7XKSA1 詳しくは

製品属性
属性値

Tags: IPP60R12, IPP60R1, IPP60R, IPP60, IPP6, IPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPP60R120C7XKSA1 説明

***ical: Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies, PG-TO220-3, RoHS

***ark: MOSFET, N-CH, 600V, 150DEG C, 92W ROHS COMPLIANT: YES

***et: MOS Power Transistors HV (>= 200V)

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

IPP60R120C7XKSA1 詳しくは

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

モデル	メーカー	説明	ストック	価格
IPP60R120C7XKSA1 DISTI # 32826243	Infineon Technologies AG	Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220 Tube	500	500:$2.1545
IPP60R120C7XKSA1 DISTI # IPP60R120C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 19A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$2.8360
IPP60R120C7XKSA1 DISTI # IPP60R120C7XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPP60R120C7XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	500:$2.1900 1000:$2.0900 2000:$1.9900 3000:$1.9900 5000:$1.8900
IPP60R120C7XKSA1 DISTI # SP001385054	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001385054) RoHS: Compliant Min Qty: 1	Europe - 0	1:€2.2900 10:€2.0900 25:€1.9900 50:€1.8900 100:€1.8900 500:€1.7900 1000:€1.6900
IPP60R120C7XKSA1 DISTI # 726-IPP60R120C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	823	1:$4.1100 10:$3.4900 100:$3.0200 250:$2.8700 500:$2.5700

関連製品

画像	モデル	説明
	Mfr.#: IPP60R125CPXKSA1 OMO.#: OMO-IPP60R125CPXKSA1	MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP
	Mfr.#: IPP60R125CP OMO.#: OMO-IPP60R125CP	MOSFET N-Ch 600V 25A TO220-3 CoolMOS CP
	Mfr.#: IPP60R125P6 OMO.#: OMO-IPP60R125P6	MOSFET HIGH POWER PRICE/PERFORM
	Mfr.#: IPP60R125P6XKSA1 OMO.#: OMO-IPP60R125P6XKSA1	MOSFET HIGH POWER PRICE/PERFORM
	Mfr.#: IPP60R120C7XKSA1 OMO.#: OMO-IPP60R120C7XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 19A TO220-3
	Mfr.#: IPP60R125CFD7XKSA1 OMO.#: OMO-IPP60R125CFD7XKSA1-INFINEON-TECHNOLOGIES	HIGH POWER_NEW
	Mfr.#: IPP60R125C6 OMO.#: OMO-IPP60R125C6-1190	MOSFET N-Ch 650V 30A TO220-3 CoolMOS C6
	Mfr.#: IPP60R125C6(SP000685844) OMO.#: OMO-IPP60R125C6-SP000685844--1190	ブランドニューオリジナル
	Mfr.#: IPP60R125C6XKSA1 OMO.#: OMO-IPP60R125C6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 30A TO220
	Mfr.#: IPP60R125CT OMO.#: OMO-IPP60R125CT-1190	ブランドニューオリジナル