TSM80N1R2CH C5G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

5.5 A

Rds On - Drain-Source Resistance:

900 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

19.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Product:

Rectifiers

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

3750

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

22 ns

Tags

TSM80N1, TSM80N, TSM80, TSM8, TSM