IPW65R660CFDFKSA1

Mfr. #:: IPW65R660CFDFKSA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 700V 6A TO247
ライフサイクル:: メーカー新製品
データシート:: IPW65R660CFDFKSA1 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

Tags: IPW65R6, IPW65R, IPW65, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW65R660CFDFKSA1 説明

***Components: In a Tube of 30, Infineon IPW65R660CFDFKSA1 MOSFET

***ical: Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans MOSFET N-CH 700V 6A 3-Pin TO-247 Tube

***ark: MOSFET, N-CH, 650V, 6A, TO-247-3

***i-Key: MOSFET N-CH 700V 6A TO247

***ronik: CoolMOS 650V 6A 660mOhm TO247

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

Market price

モデル	メーカー	説明	ストック	価格
IPW65R660CFDFKSA1 DISTI # V99:2348_06383160	Infineon Technologies AG	Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	140	100:$1.7851 25:$1.9090 10:$2.1065 1:$2.6004
IPW65R660CFDFKSA1 DISTI # IPW65R660CFDFKSA1-ND	Infineon Technologies AG	MOSFET N-CH 700V 6A TO247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IPW65R660CFDFKSA1 DISTI # 26197576	Infineon Technologies AG	Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	140	100:$1.7851 25:$1.9090 10:$2.1065 6:$2.6004
IPW65R660CFDFKSA1 DISTI # IPW65R660CFDFKSA1	Infineon Technologies AG	- Bulk (Alt: IPW65R660CFDFKSA1) RoHS: Compliant Min Qty: 358 Container: Bulk	Americas - 0	3580:$0.8889 1790:$0.9049 1074:$0.9369 716:$0.9719 358:$1.0079
IPW65R660CFDFKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPW65R660CFD DISTI # 726-IPW65R660CFD	Infineon Technologies AG	MOSFET N-Ch 650V 6A TO247-3 CoolMOS CFD2 RoHS: Compliant	0	1:$2.2500 10:$1.9200 100:$1.5300
IPW65R660CFDFKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	14880	1000:$0.9200 500:$0.9700 100:$1.0100 25:$1.0500 1:$1.1300
IPW65R660CFDFKSA1 DISTI # 8977655	Infineon Technologies AG	MOSFET N-CHANNEL 700V 6A COOLMOS TO247, PK	130	250:£1.0000 100:£1.0580 50:£1.1920 10:£1.3240 5:£1.6600
IPW65R660CFDFKSA1 DISTI # 2480876	Infineon Technologies AG	MOSFET, N-CH, 650V, 6A, TO-247-3 RoHS: Compliant	0	100:$2.3600 10:$2.9500 1:$3.4600
IPW65R660CFDFKSA1 DISTI # 2480876	Infineon Technologies AG	MOSFET, N-CH, 650V, 6A, TO-247-3	0	500:£1.1200 250:£1.1500 100:£1.1700 10:£1.4700 1:£1.9400

IPW65R660CFDFKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes