SIHB33N60ET5-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

33 A

Rds On - Drain-Source Resistance:

99 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

100 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

278 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

E

Transistor Type:

MOSFET

Brand:

Vishay / Siliconix

Product Type:

MOSFET

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

99 ns

Typical Turn-On Delay Time:

28 ns

Unit Weight:

0.077603 oz

Tags

SIHB33, SIHB3, SIHB, SIH