IRFW520ATM

IRFW520ATM
Mfr. #:
IRFW520ATM
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Lifecycle:
New from this manufacturer.
Datasheet:
IRFW520ATM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IRFW5, IRFW, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFETs 100V N-Channel A-FET
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N-CHANNEL POWER MOSFET
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N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in D2PAK package
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Trans MOSFET N-CH 525V 10A 3-Pin(2+Tab) D2PAK T/R
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Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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MOSFET, N CH, 525V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***ser
MOSFETs N-Ch/600V/7a/1.2Ohm
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N-CHANNEL POWER MOSFET
Part # Mfg. Description Stock Price
IRFW520ATMFairchild Semiconductor CorporationPower Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant
774
  • 1000:$0.3800
  • 500:$0.4000
  • 100:$0.4200
  • 25:$0.4400
  • 1:$0.4700
Image Part # Description
IRFW510ATM

Mfr.#: IRFW510ATM

OMO.#: OMO-IRFW510ATM-1190

MOSFET
IRFW520ATM

Mfr.#: IRFW520ATM

OMO.#: OMO-IRFW520ATM-1190

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRFW520ATMFSC

Mfr.#: IRFW520ATMFSC

OMO.#: OMO-IRFW520ATMFSC-1190

New and Original
IRFW530

Mfr.#: IRFW530

OMO.#: OMO-IRFW530-1190

New and Original
IRFW530ATM

Mfr.#: IRFW530ATM

OMO.#: OMO-IRFW530ATM-1190

MOSFET 100V N-Channel A-FET
IRFW530ATM-NL

Mfr.#: IRFW530ATM-NL

OMO.#: OMO-IRFW530ATM-NL-1190

New and Original
IRFW540

Mfr.#: IRFW540

OMO.#: OMO-IRFW540-1190

New and Original
IRFW540ATM_NL

Mfr.#: IRFW540ATM_NL

OMO.#: OMO-IRFW540ATM-NL-1190

New and Original
IRFW550A

Mfr.#: IRFW550A

OMO.#: OMO-IRFW550A-1190

New and Original
IRFW550ATM

Mfr.#: IRFW550ATM

OMO.#: OMO-IRFW550ATM-1190

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of IRFW520ATM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.57
$0.57
10
$0.54
$5.42
100
$0.51
$51.30
500
$0.48
$242.25
1000
$0.46
$456.00
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