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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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モデル | メーカー | 説明 | ストック | 価格 |
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SIHB12N60ET5-GE3 DISTI # SIHB12N60ET5-GE3-ND | Vishay Siliconix | MOSFET N-CH 600V 12A TO263 RoHS: Not compliant Min Qty: 1 Container: Bulk | 800In Stock |
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SIHB12N60ET5-GE3 DISTI # SIHB12N60ET5-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 600V 12A 3-Pin D2PAK T/R - Bulk (Alt: SIHB12N60ET5-GE3) RoHS: Not Compliant Min Qty: 800 Container: Bulk | Americas - 0 |
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SIHB12N60ET5-GE3 DISTI # 78-SIHB12N60ET5-GE3 | Vishay Intertechnologies | MOSFET N-Channel 600V RoHS: Compliant | 0 |
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SIHB12N60ET5-GE3 DISTI # TMOS2029 | Vishay Intertechnologies | N-CH 600V 12A 380mOhm TO-263 RoHS: Compliant | Stock DE - 3200Stock HK - 0Stock US - 0 |
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画像 | モデル | 説明 |
---|---|---|
Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3 |
MOSFET 650V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3 |
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | |
Mfr.#: SIHB12N60ET1-GE3 OMO.#: OMO-SIHB12N60ET1-GE3 |
MOSFET N-Channel 600V | |
Mfr.#: SIHB12N60E-GE3 OMO.#: OMO-SIHB12N60E-GE3-VISHAY |
Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS | |
Mfr.#: SIHB12N65E-GE3 OMO.#: OMO-SIHB12N65E-GE3-VISHAY |
IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS | |
Mfr.#: SIHB12N60E OMO.#: OMO-SIHB12N60E-1190 |
ブランドニューオリジナル | |
Mfr.#: SIHB12N60EGE3 OMO.#: OMO-SIHB12N60EGE3-1190 |
Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
Mfr.#: SIHB12N65E OMO.#: OMO-SIHB12N65E-1190 |
ブランドニューオリジナル | |
Mfr.#: SIHB12N60ET1-GE3 OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY |
MOSFET N-CH 600V 12A TO263 | |
Mfr.#: SIHB12N60ET5-GE3 OMO.#: OMO-SIHB12N60ET5-GE3-VISHAY |
MOSFET N-CH 600V 12A TO263 |