PartNumber | SIHB12N60E-GE3 | SIHB12N60ET1-GE3 | SIHB12N60ET5-GE3 |
Description | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET N-Channel 600V | MOSFET N-Channel 600V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 12 A | 12 A | 12 A |
Rds On Drain Source Resistance | 380 mOhms | 380 mOhms | 380 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 29 nC | 29 nC | 29 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 147 W | 147 W | 147 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | - | - |
Series | E | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 19 ns | 19 ns | 19 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 19 ns | 19 ns | 19 ns |
Factory Pack Quantity | 1000 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
Unit Weight | 0.050717 oz | 0.077603 oz | 0.077603 oz |
Height | - | 4.83 mm | 4.83 mm |
Length | - | 10.67 mm | 10.67 mm |
Width | - | 9.65 mm | 9.65 mm |