IDM08G120C5XTMA1

Mfr. #:: IDM08G120C5XTMA1
メーカー:: Infineon Technologies
説明:: Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
ライフサイクル:: メーカー新製品
データシート:: IDM08G120C5XTMA1 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: IDM08G120C5XTMA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: ダイオード、整流器-シングル

シリーズ: thinQ！

製品: ショットキーシリコンカーバイドダイオード

包装: テープ＆リール（TR）

パーツエイリアス: IDM08G120C5 SP001162122

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-252-3, DPak (2 Leads + Tab), SC-63

テクノロジー: SiC

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: PG-TO252-2

構成: 独身

スピード: Fast Recovery = 200mA (Io)

ダイオードタイプ: 炭化ケイ素ショットキー

Current-Reverse-Leakage-Vr: 40μA @ 1200V

電圧-順方向-Vf-最大-If: 1.95V @ 8A

電圧-DC-逆Vr-最大: 1200V (1.2kV)

現在-平均-整流-イオ: 8A (DC)

Reverse-Recovery-Time-trr: -

静電容量-Vr-F: 365pF @ 1V, 1MHz

作動-温度-ジャンクション: -55°C ~ 175°C

Pd-電力損失: 167 W

最高作動温度: + 175 C

最低作動温度: - 55 C

Vf-順方向電圧: 1.65 V

Vr-逆電圧: 1.2 kV

Ir-逆電流: 3 uA

If-Forward-Current: 8 A

Vrrm-繰り返し-逆電圧: 1.2 kV

Ifsm-Forward-Surge-Current: 70 A

Tags: IDM0, IDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IDM08G120C5XTMA1 説明

***ure Electronics: IDM08G120C5 Series 1200 V 27 A 5th Generation ThinQ!SiC Schottky Diode-TO-252-3

***ark: Sic Schottky Diode, 1.2Kv, 27A, To-252; Product Range:thinq 5G 1200V Series; Diode Configuration:single; Repetitive Reverse Voltage Vrrm Max:1.2Kv; Continuous Forward Current If:27A; Total Capacitive Charge Qc:28Nc; Diode Case Rohs Compliant: Yes

***ineon: With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives

IDM08G120C5XTMA1 詳しくは

CoolSiC™ Schottky Diodes: Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.

Gen 5 1200V CoolSiC™ Schottky Diodes: Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.

Market price

モデル	メーカー	説明	ストック	価格
IDM08G120C5XTMA1 DISTI # V72:2272_09156853	Infineon Technologies AG	Diode Schottky 1.2KV 27A 3-Pin(2+Tab) DPAK T/R	2480	1000:$3.4910 500:$3.9620 250:$4.3670 100:$4.5430 25:$5.0240 10:$5.3210 1:$5.7810
IDM08G120C5XTMA1 DISTI # IDM08G120C5XTMA1CT-ND	Infineon Technologies AG	DIODE SCHOTTKY 1200V 8A TO252-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	872In Stock	1000:$4.0508 500:$4.6510 100:$5.3411 10:$6.4510 1:$7.1400
IDM08G120C5XTMA1 DISTI # IDM08G120C5XTMA1DKR-ND	Infineon Technologies AG	DIODE SCHOTTKY 1200V 8A TO252-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	872In Stock	1000:$4.0508 500:$4.6510 100:$5.3411 10:$6.4510 1:$7.1400
IDM08G120C5XTMA1 DISTI # IDM08G120C5XTMA1TR-ND	Infineon Technologies AG	DIODE SCHOTTKY 1200V 8A TO252-2 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$3.8843
IDM08G120C5XTMA1 DISTI # 26196085	Infineon Technologies AG	Diode Schottky 1.2KV 27A 3-Pin(2+Tab) DPAK T/R	2480	1000:$3.4910 500:$3.9620 250:$4.3670 100:$4.5430 25:$5.0240 10:$5.3210 2:$5.7810
IDM08G120C5XTMA1 DISTI # IDM08G120C5XTMA1	Infineon Technologies AG	Diode Schottky Diode 1200V 27A 2-Pin TO-252 T/R - Tape and Reel (Alt: IDM08G120C5XTMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$3.8900 5000:$3.7900 10000:$3.6900 15000:$3.4900 25000:$3.4900
IDM08G120C5XTMA1 DISTI # 34AC1582	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:27A,Total Capacitive Charge Qc:28nC,Diode Case , RoHS Compliant: Yes	2445	1:$6.6000 10:$5.9700 25:$5.6900 50:$5.3200 100:$4.9400 250:$4.7200 500:$4.3100 1000:$3.7500
IDM08G120C5XTMA1	Infineon Technologies AG	RoHS: Not Compliant	2210	1000:$4.2500 500:$4.4700 100:$4.6600 25:$4.8600 1:$5.2300
IDM08G120C5XTMA1 DISTI # 726-IDM08G120C5XTMA1	Infineon Technologies AG	Schottky Diodes & Rectifiers SIC CHIP/DISCRETE RoHS: Compliant	2018	1:$6.6000 10:$5.9700 25:$5.6900 100:$4.9400 250:$4.7200 500:$4.3100 1000:$3.7500 2500:$3.6100
IDM08G120C5XTMA1 DISTI # C1S322000624474	Infineon Technologies AG	Rectifier Diodes RoHS: Compliant	2480	250:$4.3670 100:$4.5430 25:$5.0240 10:$5.3210 1:$5.7810
IDM08G120C5XTMA1 DISTI # 2780806	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252 RoHS: Compliant	2460	1:£5.2000 5:£4.8400 10:£4.4700 50:£4.1800 100:£3.8900
IDM08G120C5XTMA1 DISTI # 2780806	Infineon Technologies AG	SIC SCHOTTKY DIODE, 1.2KV, 27A, TO-252 RoHS: Compliant	2445	1:$8.5700 5:$8.0100 10:$7.0800 50:$6.7000 100:$6.3500 250:$6.0400

IDM08G120C5XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes