BSC0923NDIATMA1

BSC0923NDIATMA1
Mfr. #:
BSC0923NDIATMA1
メーカー:
Infineon Technologies
説明:
MOSFET 2N-CH 30V 17A/32A TISON8
ライフサイクル:
メーカー新製品
データシート:
BSC0923NDIATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
FET-アレイ
シリーズ
OptiMOS
包装
テープ&リール(TR)
パッケージ-ケース
8-PowerTDFN
作動温度
-55°C ~ 150°C (TJ)
取付タイプ
表面実装
サプライヤー-デバイス-パッケージ
PG-TISON-8
FETタイプ
2 N-Channel (Dual) Asymmetrical
パワーマックス
1W
Drain-to-Source-Voltage-Vdss
30V
入力-静電容量-Ciss-Vds
1160pF @ 15V
FET機能
Logic Level Gate, 4.5V Drive
Current-Continuous-Drain-Id-25°C
17A, 32A
Rds-On-Max-Id-Vgs
5 mOhm @ 20A, 10V
Vgs-th-Max-Id
2V @ 250μA
ゲートチャージ-Qg-Vgs
10nC @ 4.5V
Tags
BSC0923, BSC092, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
***et Europe
Trans MOSFET N-CH 30V 10A/15A 8-Pin TISON T/R
***an P&S
30V,5/2.8mΩ,40A,Dual N-Ch Power MOSFET
***i-Key
MOSFET 2N-CH 30V 17A/32A TISON8
***ronik
DUAL 30V 40A 5.0mOhm TISON-8
***ark
Mosfet, Dual N-Ch, 30V, 40A, Tison; Transistor Polarity:dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(On):3.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 30V, 40A, TISON; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:2.5W; Transistor Case Style:TISON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, DOPPIO CA-N, 30V, 40A, TISON; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:40A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):3.8ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:TISON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
モデル メーカー 説明 ストック 価格
BSC0923NDIATMA1
DISTI # BSC0923NDIATMA1-ND
Infineon Technologies AGMOSFET 2N-CH 30V 17A/32A TISON8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.5047
BSC0923NDIATMA1
DISTI # BSC0923NDIATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 10A/15A 8-Pin TISON T/R - Tape and Reel (Alt: BSC0923NDIATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 5000
  • 5000:$0.3969
  • 5002:$0.3829
  • 10002:$0.3689
  • 25000:$0.3569
  • 50000:$0.3499
BSC0923NDIATMA1
DISTI # 13AC8338
Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 40A, TISON,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes4985
  • 1:$1.4200
  • 10:$1.2200
  • 25:$1.1000
  • 50:$0.9990
  • 100:$0.8380
  • 250:$0.7410
  • 500:$0.6440
  • 1000:$0.6180
BSC0923NDI
DISTI # 726-BSC0923NDI
Infineon Technologies AGMOSFET N-Ch 30V,30V 40A,40A TISON-8
RoHS: Compliant
0
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 5000:$0.4590
SP000934758
DISTI # 726-SP000934758
Infineon Technologies AGMOSFET N-Ch 30V,30V 40A,40A TISON-8
RoHS: Compliant
0
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 5000:$0.4590
BSC0923NDIATMA1
DISTI # 2726089
Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 40A, TISON
RoHS: Compliant
4985
  • 1:$1.9500
  • 10:$1.7000
  • 100:$1.3900
BSC0923NDIATMA1
DISTI # 2726089
Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 40A, TISON
RoHS: Compliant
4985
  • 5:£0.4940
  • 25:£0.4840
  • 100:£0.4740
画像 モデル 説明
BSC0923NDI

Mfr.#: BSC0923NDI

OMO.#: OMO-BSC0923NDI

MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0923NDIATMA1

Mfr.#: BSC0923NDIATMA1

OMO.#: OMO-BSC0923NDIATMA1

MOSFET LV POWER MOS
BSC0923NDI

Mfr.#: BSC0923NDI

OMO.#: OMO-BSC0923NDI-1190

MOSFET N-Ch 30V,30V 40A,40A TISON-8
BSC0923NDI , TDZ TR 24 ,

Mfr.#: BSC0923NDI , TDZ TR 24 ,

OMO.#: OMO-BSC0923NDI-TDZ-TR-24--1190

ブランドニューオリジナル
BSC0923NDIATMA1

Mfr.#: BSC0923NDIATMA1

OMO.#: OMO-BSC0923NDIATMA1-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 30V 17A/32A TISON8
可用性
ストック:
Available
注文中:
5000
数量を入力してください:
BSC0923NDIATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$0.52
$0.52
10
$0.50
$4.99
100
$0.47
$47.24
500
$0.45
$223.05
1000
$0.42
$419.90
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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