IPB80P03P4L04ATMA1

Mfr. #:: IPB80P03P4L04ATMA1
メーカー:: Infineon Technologies
説明:: MOSFET P-CH 30V 80A TO263-3
ライフサイクル:: メーカー新製品
データシート:: IPB80P03P4L04ATMA1 データシート
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製品属性
属性値

Tags: IPB80P03P4L, IPB80P03P4, IPB80P03, IPB80P, IPB8, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB80P03P4L04ATMA1 説明

***Components: On a Reel of 1000, P-Channel MOSFET, 80 A, 30 V, 3-Pin D2PAK Infineon IPB80P03P4L04ATMA1

***p One Stop Japan: Trans MOSFET P-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ponent Sense: MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2

***et: Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263

***et Europe: Trans MOSFET P-CH 30V 80A 3-Pin TO-263 T/R

***ronik: MOSFET -30V 4.1mOHM AECQ TO263

***i-Key: MOSFET P-CH 30V 80A TO263-3

***ark: Mosfet, Aec-Q101, P-Ch, -30V, To-263; Transistor Polarity:p Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, P-CH, -30V, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-80A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:137W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS P2 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-P, -30V, TO-263; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-80A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0034ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.5V; Dissipazione di Potenza Pd:137W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS P2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: P-channel - Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); 100% Avalanche tested; Intended for reverse battery protection | Benefits: No charge pump required for high side drive; Simple interface drive circuit; World's lowest RDSon at 30V; Highest current capability; Lowest switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Standard packages TO-252, TO-263, TO-220, TO-262 | Target Applications: High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors); Bridge configuration could be realized with 30V P-Channels high side device with no need of charge pump

Market price

モデル	メーカー	説明	ストック	価格
IPB80P03P4L04ATMA1 DISTI # IPB80P03P4L04ATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$1.0238
IPB80P03P4L04ATMA1 DISTI # IPB80P03P4L04ATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80P03P4L04ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.9239 2000:$0.8909 4000:$0.8589 6000:$0.8299 10000:$0.8149
IPB80P03P4L04ATMA1 DISTI # SP000396284	Infineon Technologies AG	Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 (Alt: SP000396284) RoHS: Compliant Min Qty: 1000	Europe - 0	1000:€1.1569 2000:€0.8989 4000:€0.8339 6000:€0.8079 10000:€0.7769
IPB80P03P4L04ATMA1 DISTI # 34AC1662	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-80A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes	1540	1000:$0.9160 500:$0.9670 250:$1.0600 100:$1.2400 50:$1.4200 25:$1.5900 10:$1.7600 1:$2.0000
IPB80P03P4L-04 DISTI # 726-IPB80P03P4L-04	Infineon Technologies AG	MOSFET P-Ch -30V -80A D2PAK-2 OptiMOS-P2 RoHS: Compliant	14837	1:$1.8800 10:$1.6000 100:$1.2800 500:$1.1200 1000:$0.9310 2000:$0.8670 5000:$0.8350
IPB80P03P4L04ATMA1 DISTI # 2781074	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263 RoHS: Compliant	1540	100:$2.1400 25:$2.6200 5:$3.0100
IPB80P03P4L04ATMA1 DISTI # 2781074	Infineon Technologies AG	MOSFET, AEC-Q101, P-CH, -30V, TO-263 RoHS: Compliant	1985	100:£1.0100 25:£1.1500 5:£1.2800

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