TSM10N80CZ C0G

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

9.5 A

Rds On - Drain-Source Resistance:

900 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

53 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

290 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Fall Time:

72 ns

Product Type:

MOSFET

Rise Time:

62 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

256 ns

Typical Turn-On Delay Time:

63 ns

Unit Weight:

0.063493 oz

Tags

TSM10N8, TSM10N, TSM10, TSM1, TSM