IPW65R190E6

Mfr. #:: IPW65R190E6
メーカー:: Rochester Electronics, LLC
説明:: IGBT Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6
ライフサイクル:: メーカー新製品
データシート:: IPW65R190E6 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CoolMOS E6

包装: チューブ

パーツエイリアス: IPW65R190E6FKSA1 IPW65R190E6XK SP000863906

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

商標名: CoolMOS

パッケージ-ケース: TO-247-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 151 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 20.2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 700 V

Rds-On-Drain-Source-Resistance: 190 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 133 nS

Qg-Gate-Charge: 73 nC

Tags: IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPW65R190E6 説明

***ical: Trans MOSFET N-CH 700V 20.2A Automotive 3-Pin(3+Tab) TO-247 Tube

***ukat: N-Ch 650V 20,2A 151W 0,19R TO247

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

モデル	メーカー	説明	ストック	価格
IPW65R190E6 DISTI # 30577718	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.8A 3-Pin(3+Tab) TO-247 RoHS: Compliant	240	100:$1.8487 14:$1.8742
IPW65R190E6FKSA1 DISTI # IPW65R190E6FKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 20.2A TO247 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
IPW65R190E6 DISTI # IPW65R190E6	Infineon Technologies AG	Trans MOSFET N-CH 700V 20.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW65R190E6) Min Qty: 188 Container: Bulk	Americas - 0	1880:$1.5900 564:$1.6900 940:$1.6900 376:$1.7900 188:$1.8900
IPW65R190E6FKSA1 DISTI # IPW65R190E6FKSA1	Infineon Technologies AG	- Bulk (Alt: IPW65R190E6FKSA1) Min Qty: 169 Container: Bulk	Americas - 0	1690:$1.7900 507:$1.8900 845:$1.8900 338:$1.9900 169:$2.0900
IPW65R190E6 DISTI # 726-IPW65R190E6	Infineon Technologies AG	MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS E6 RoHS: Compliant	210	1:$3.8300 10:$3.2600 100:$2.8200
IPW65R190E6	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	539	1000:$1.7500 500:$1.8400 100:$1.9200 25:$2.0000 1:$2.1500
IPW65R190E6FKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant	2400	1000:$1.9500 500:$2.0500 100:$2.1300 25:$2.2300 1:$2.4000
IPW65R190E6FKSA1 DISTI # 8977649P	Infineon Technologies AG	MOSFET N-CH 700V 20.8A COOLMOS TO247, TU	42	150:£1.9400 60:£2.0930 30:£2.2430 6:£2.4400
IPW65R190E6FKSA1 DISTI # IPW65R190E6	Infineon Technologies AG	N-Ch 650V 20,2A 151W 0,19R TO247 RoHS: Compliant	153	1:€6.0300 10:€3.0300 50:€1.5300 100:€1.4600

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