APTGV25H120BG

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Modules

RoHS:

Y

Product:

IGBT Silicon Modules

Configuration:

Full Bridge

Collector- Emitter Voltage VCEO Max:

1.2 kV

Collector-Emitter Saturation Voltage:

1.7 V, 3.2 V

Continuous Collector Current at 25 C:

40 A, 70 A

Gate-Emitter Leakage Current:

400 nA, 100 nA

Pd - Power Dissipation:

156 W, 208 W, 312 W

Package / Case:

SP4

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 100 C

Technology:

Si

Brand:

Microchip / Microsemi

Mounting Style:

Chassis Mount

Maximum Gate Emitter Voltage:

20 V

Product Type:

IGBT Modules

Factory Pack Quantity:

50

Subcategory:

IGBTs

Unit Weight:

3.880136 oz

Tags

APTGV, APTG, APT