IPD60R180C7ATMA1

IPD60R180C7ATMA1
Mfr. #:
IPD60R180C7ATMA1
メーカー:
Infineon Technologies
説明:
MOSFET HIGH POWER_NEW
ライフサイクル:
メーカー新製品
データシート:
IPD60R180C7ATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IPD60R180C7ATMA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-252-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
600 V
Id-連続ドレイン電流:
13 A
Rds On-ドレイン-ソース抵抗:
180 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
24 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
68 W
構成:
独身
チャネルモード:
強化
商標名:
CoolMOS
包装:
リール
高さ:
2.3 mm
長さ:
6.5 mm
シリーズ:
CoolMOS C7
幅:
6.22 mm
ブランド:
インフィニオンテクノロジーズ
立ち下がり時間:
6 ns
製品タイプ:
MOSFET
立ち上がり時間:
7 ns
ファクトリーパックの数量:
2500
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
50 ns
典型的なターンオン遅延時間:
9.3 ns
パーツ番号エイリアス:
IPD60R180C7 SP001277630
単位重量:
0.139332 oz
Tags
IPD60R180C, IPD60R18, IPD60R1, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R
***nell
MOSFET, N-CH, 600V, 13A, 150DEG C, 68W; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 68W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
モデル メーカー 説明 ストック 価格
IPD60R180C7ATMA1
DISTI # V36:1790_06377622
Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$1.3071
IPD60R180C7ATMA1
DISTI # IPD60R180C7ATMA1-ND
Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$1.3478
IPD60R180C7ATMA1
DISTI # 31223171
Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$1.2576
IPD60R180C7ATMA1
DISTI # 27539216
Infineon Technologies AGTrans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK T/R2500
  • 2500:$1.4051
IPD60R180C7ATMA1
DISTI # IPD60R180C7ATMA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPD60R180C7ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$1.2900
  • 5000:$1.1900
  • 10000:$1.1900
  • 15000:$1.0900
  • 25000:$1.0900
IPD60R180C7ATMA1
DISTI # SP001277630
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP001277630)
RoHS: Compliant
Min Qty: 2500
Europe - 0
  • 2500:€1.5109
  • 5000:€1.2589
  • 10000:€1.1619
  • 15000:€1.0789
  • 25000:€1.0069
IPD60R180C7ATMA1
DISTI # 726-IPD60R180C7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW5699
  • 1:$2.6700
  • 10:$2.2600
  • 100:$1.8100
  • 500:$1.5800
  • 1000:$1.3100
画像 モデル 説明
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MOSFET 60V Vds; +/-8V Vgs SOT-23; 4A Id
STD16N50M2

Mfr.#: STD16N50M2

OMO.#: OMO-STD16N50M2

MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
TEA19161T/2Y

Mfr.#: TEA19161T/2Y

OMO.#: OMO-TEA19161T-2Y

Switching Controllers TEA19161T/SO16//2/REEL 13 Q1 DP
MMIX1T550N055T2

Mfr.#: MMIX1T550N055T2

OMO.#: OMO-MMIX1T550N055T2

MOSFET SMPD MOSFETs Power Device
C3216X7R1E106M160AE

Mfr.#: C3216X7R1E106M160AE

OMO.#: OMO-C3216X7R1E106M160AE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 1206 25V 10uF X7R 20% T: 1.6mm
TEA1995T/1J

Mfr.#: TEA1995T/1J

OMO.#: OMO-TEA1995T-1J

Power Management Specialized - PMIC Synchronous Rectifier Controller
SL22 10008

Mfr.#: SL22 10008

OMO.#: OMO-SL22-10008-AMETHERM

Inrush Current Limiters 22mm 10ohms 8A INRSH CURR LIMITER
TEA1995T/1J

Mfr.#: TEA1995T/1J

OMO.#: OMO-TEA1995T-1J-NXP-SEMICONDUCTORS

Hot Swap Voltage Controllers Synchronous Rectifier Controlle
STD16N50M2

Mfr.#: STD16N50M2

OMO.#: OMO-STD16N50M2-STMICROELECTRONICS

MOSFET N-CH 500V 13A DPAK
可用性
ストック:
Available
注文中:
1987
数量を入力してください:
IPD60R180C7ATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.67
$2.67
10
$2.26
$22.60
100
$1.81
$181.00
500
$1.58
$790.00
1000
$1.31
$1 310.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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