IPN60R2K1CEATMA1

IPN60R2K1CEATMA1
Mfr. #:
IPN60R2K1CEATMA1
メーカー:
Infineon Technologies
説明:
MOSFET NCH 600V 3.7A SOT223
ライフサイクル:
メーカー新製品
データシート:
IPN60R2K1CEATMA1 データシート
配達:
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支払い:
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ECAD Model:
詳しくは:
IPN60R2K1CEATMA1 詳しくは
製品属性
属性値
Tags
IPN60R2, IPN60, IPN6, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - SOT-223
***ical
Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
***ark
Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.89Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes
***ineon
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
モデル メーカー 説明 ストック 価格
IPN60R2K1CEATMA1
DISTI # 33943948
Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
9000
  • 3000:$0.1370
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1CT-ND
Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
25In Stock
  • 1000:$0.2011
  • 500:$0.2603
  • 100:$0.3313
  • 10:$0.4440
  • 1:$0.5200
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1DKR-ND
Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
25In Stock
  • 1000:$0.2011
  • 500:$0.2603
  • 100:$0.3313
  • 10:$0.4440
  • 1:$0.5200
IPN60R2K1CEATMA1
DISTI # IPN60R2K1CEATMA1TR-ND
Infineon Technologies AGMOSFET NCH 600V 3.7A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 30000:$0.1470
  • 15000:$0.1551
  • 6000:$0.1666
  • 3000:$0.1781
IPN60R2K1CEATMA1
DISTI # V72:2272_14663636
Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
RoHS: Compliant
0
    IPN60R2K1CEATMA1
    DISTI # V36:1790_14663636
    Infineon Technologies AGTrans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R
    RoHS: Compliant
    0
    • 3000000:$0.1274
    • 1500000:$0.1277
    • 300000:$0.1447
    • 30000:$0.1733
    • 3000:$0.1781
    IPN60R2K1CEATMA1
    DISTI # IPN60R2K1CEATMA1
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN60R2K1CEATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.1389
    • 18000:$0.1409
    • 12000:$0.1459
    • 6000:$0.1509
    • 3000:$0.1569
    IPN60R2K1CEATMA1
    DISTI # IPN60R2K1CE
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: IPN60R2K1CE)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
    • 150000:$0.1385
    • 75000:$0.1403
    • 30000:$0.1421
    • 15000:$0.1439
    • 9000:$0.1478
    • 6000:$0.1519
    • 3000:$0.1563
    IPN60R2K1CEATMA1
    DISTI # SP001434886
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: SP001434886)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.1299
    • 18000:€0.1399
    • 12000:€0.1649
    • 6000:€0.2019
    • 3000:€0.2599
    IPN60R2K1CEATMA1
    DISTI # 97Y1834
    Infineon Technologies AGTrans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 97Y1834)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
      IPN60R2K1CEATMA1
      DISTI # 97Y1834
      Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.89ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1975
      • 1000:$0.2070
      • 500:$0.2270
      • 250:$0.2480
      • 100:$0.2670
      • 50:$0.3250
      • 25:$0.3820
      • 10:$0.4390
      • 1:$0.5230
      IPN60R2K1CEATMA1
      DISTI # 726-IPN60R2K1CEATMA1
      Infineon Technologies AGMOSFET CONSUMER
      RoHS: Compliant
      26012
      • 1:$0.4700
      • 10:$0.3950
      • 100:$0.2410
      • 1000:$0.1860
      • 3000:$0.1590
      IPN60R2K1CEATMA1
      DISTI # 1300919P
      Infineon Technologies AGMOSFET N-CH 600V 5.9A COOLMOS CE SOT-223, RL5525
      • 2500:£0.1200
      • 1000:£0.1340
      • 500:£0.1540
      • 125:£0.1790
      IPN60R2K1CEATMA1
      DISTI # 2617449
      Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3
      RoHS: Compliant
      520
      • 1000:$0.3040
      • 500:$0.3930
      • 100:$0.5000
      • 10:$0.6690
      • 1:$0.7800
      IPN60R2K1CEATMA1
      DISTI # 2617449
      Infineon Technologies AGMOSFET, N-CH, 600V, 3.7A, SOT-223-3525
      • 500:£0.1430
      • 250:£0.1640
      • 100:£0.1850
      • 25:£0.3270
      • 5:£0.3450
      画像 モデル 説明
      IPN60R2K1CEATMA1

      Mfr.#: IPN60R2K1CEATMA1

      OMO.#: OMO-IPN60R2K1CEATMA1

      MOSFET CONSUMER
      IPN60R2K

      Mfr.#: IPN60R2K

      OMO.#: OMO-IPN60R2K-1190

      ブランドニューオリジナル
      IPN60R2K1CE

      Mfr.#: IPN60R2K1CE

      OMO.#: OMO-IPN60R2K1CE-1190

      - Bulk (Alt: IPN60R2K1CE)
      IPN60R2K1CEATMA1

      Mfr.#: IPN60R2K1CEATMA1

      OMO.#: OMO-IPN60R2K1CEATMA1-INFINEON-TECHNOLOGIES

      MOSFET NCH 600V 3.7A SOT223
      可用性
      ストック:
      Available
      注文中:
      2500
      数量を入力してください:
      IPN60R2K1CEATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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