FZ750R65KE3NOSA1

Mfr. #:: FZ750R65KE3NOSA1
メーカー:: Infineon Technologies
説明:: MODULE IGBT A-IHV190-6
ライフサイクル:: メーカー新製品
データシート:: FZ750R65KE3NOSA1 データシート
配達:: DHL FedEx Ups TNT EMS
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製品属性
属性値

Tags: FZ750R65K, FZ7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ750R65KE3NOSA1 説明

***et Europe: Trans IGBT Module N-CH 6.5KV 750A 9-pin IHV190-6

***ineon SCT: 6500V IHV 190mm single switch IGBT Module with IGBT3 - The best solution for your traction and industry applications, A-IHV190-6

***ark: IGBT MOD, 6.5KV, 750A; Continuous Collector Current:750A; Collector Emitter Saturation Voltage:3V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Tab; Collector Emitter Voltage Max:6.5kV; Product Range:- RoHS Compliant: Yes

***ineon: 6500V IHV 190mm single switch IGBT Module with IGBT3 - The best solution for your traction and industry applications. | Summary of Features: Low V(cesat); AlSiC Base Plate for increased Thermal Cycling Capability; Extended Storage Temperature down to T(stg) = -55C; Package with CTI > 600; Package with enhanced Insulation of 10.2kV AC 1min; High Creepage and Clearance Distance | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav

***ical: Trans IGBT Module N-CH 3300V 750A 4900000mW Automotive 5-Pin IHV73-6 Tray

***S: new, original packaged

***el Electronic: MOD IGBT MED PWR A-IHV73-6

***i-Key: IGBT MOD 3300V 750A 4900W

***el Nordic: Contact for details

***ineon: 3300V IHV 73mm single switch IGBT Module with IGBT2 Low Loss and 10.2kV isolation - The best solution for your traction and industry applications. | Summary of Features: High reliability and robust module construction (6.5kV housing); 10.2kV insulation | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav

***ical: Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray

***ark: Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ineon: EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 560A 1785000mW 7-Pin Case SP-6 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: IGBT TRENCH DUAL SRC 1200V SP6

***el Electronic: IGBT MODULE 1200V 560A 1785W SP6

***ure Electronics: APTGT600x Series 600 V 700 A Trench + Field Stop IGBT® Power Module - SP6

*** Stop Electro: Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel

***et: Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes

***i-Key: POWER MODULE IGBT 600V 600A SP6

***el Electronic: IGBT MODULE 600V 700A 2300W SP6

Market price

モデル	メーカー	説明	ストック	価格
FZ750R65KE3NOSA1 DISTI # FZ750R65KE3NOSA1-ND	Infineon Technologies AG	MODULE IGBT A-IHV190-6 RoHS: Not compliant Min Qty: 1 Container: Tray	Temporarily Out of Stock	1:$2,700.7400
FZ750R65KE3NOSA1 DISTI # SP000555604	Infineon Technologies AG	TRACTION (Alt: SP000555604) RoHS: Not Compliant Min Qty: 1	Europe - 26	1:€2,410.0000
FZ750R65KE3NOSA1 DISTI # FZ750R65KE3NOSA1	Infineon Technologies AG	TRACTION - Trays (Alt: FZ750R65KE3NOSA1) RoHS: Not Compliant Min Qty: 1 Container: Tray	Americas - 0
FZ750R65KE3 DISTI # 641-FZ750R65KE3	Infineon Technologies AG	IGBT Modules IGBT 6500V 750A	0	1:$2,658.2100

画像	モデル	説明
	Mfr.#: FZ750R65KE3 OMO.#: OMO-FZ750R65KE3	IGBT Modules IGBT 6500V 750A
	Mfr.#: FZ750R65KE3 OMO.#: OMO-FZ750R65KE3-125	IGBT Modules IGBT 6500V 750A
	Mfr.#: FZ750R65FE3 OMO.#: OMO-FZ750R65FE3-1190	ブランドニューオリジナル
	Mfr.#: FZ750R65KE3-PS-S2 OMO.#: OMO-FZ750R65KE3-PS-S2-1190	ブランドニューオリジナル
	Mfr.#: FZ750R65KE3NOSA1 OMO.#: OMO-FZ750R65KE3NOSA1-INFINEON-TECHNOLOGIES	MODULE IGBT A-IHV190-6
	Mfr.#: FZ750R65KE3T OMO.#: OMO-FZ750R65KE3T-1190	ブランドニューオリジナル
	Mfr.#: FZ750R65KE3_C1 OMO.#: OMO-FZ750R65KE3-C1-1190	PL33, A-IHV190-6 TRACTION (Alt: FZ750R65KE3_C1)
	Mfr.#: FZ750R65KE3_P2_S2 OMO.#: OMO-FZ750R65KE3-P2-S2-1190	ブランドニューオリジナル
	Mfr.#: FZ750R65KE3C1NOSA1 OMO.#: OMO-FZ750R65KE3C1NOSA1-1190	IHV, IHM T, XHP 3,3-6,5K - Trays (Alt: FZ750R65KE3C1NOSA1)

FZ750R65KE3NOSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes