AFT18P350-4S2LR6

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

N-Channel

Technology:

Si

Id - Continuous Drain Current:

1 A

Vds - Drain-Source Breakdown Voltage:

65 V

Gain:

16.1 dB

Output Power:

63 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

NI-1230-4

Packaging:

Reel

Configuration:

Single

Operating Frequency:

1805 MHz to 1880 MHz

Series:

AFT18P350_4S2L

Type:

RF Power MOSFET

Brand:

NXP / Freescale

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

150

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

1.2 V

Vgs th - Gate-Source Threshold Voltage:

1.9 V

Part # Aliases:

935317727128

Unit Weight:

0.300472 oz

Tags

AFT18, AFT1, AFT