TSM080N03PQ56 RLG

Product Attribute

Attribute Value

Manufacturer:

Taiwan Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PDFN56-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

73 A

Rds On - Drain-Source Resistance:

6.5 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

14.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

69 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Taiwan Semiconductor

Forward Transconductance - Min:

41

Fall Time:

8.2 ns

Product Type:

MOSFET

Rise Time:

12.5 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27.6 ns

Typical Turn-On Delay Time:

4.8 ns

Tags

TSM080, TSM08, TSM0, TSM