BSC026N02KS G

BSC026N02KS G
Mfr. #:
BSC026N02KS G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
Lifecycle:
New from this manufacturer.
Datasheet:
BSC026N02KS G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BSC026N02KS G more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
FETs - Single
Series
OptiMOS
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664
Mounting-Style
SMD/SMT
Tradename
OptiMOS
Package-Case
8-PowerTDFN
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
PG-TDSON-8
Configuration
Single Quad Drain Triple Source
FET-Type
MOSFET N-Channel, Metal Oxide
Power-Max
78W
Transistor-Type
1 N-Channel
Drain-to-Source-Voltage-Vdss
20V
Input-Capacitance-Ciss-Vds
7800pF @ 10V
FET-Feature
Logic Level Gate, 2.5V Drive
Current-Continuous-Drain-Id-25°C
25A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
2.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 200μA
Gate-Charge-Qg-Vgs
52.7nC @ 4.5V
Pd-Power-Dissipation
2.8 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
9 ns
Rise-Time
115 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuous-Drain-Current
25 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
52 ns
Typical-Turn-On-Delay-Time
21 ns
Channel-Mode
Enhancement
Tags
BSC026N02KSG, BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
BSC026N02KSGAUMA1
DISTI # V72:2272_06384322
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
  • 1:$1.2554
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.6901
BSC026N02KSGAUMA1
DISTI # 30701482
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 10000:$0.5798
  • 5000:$0.6029
BSC026N02KSGAUMA1
DISTI # 26195427
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant
4849
  • 3000:$0.5712
  • 1000:$0.6346
  • 500:$0.8121
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 11:$1.1161
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.6789
  • 10000:$0.6549
  • 20000:$0.6309
  • 30000:$0.6099
  • 50000:$0.5989
BSC026N02KSGAUMA1
DISTI # SP000379664
Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R (Alt: SP000379664)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€0.9889
  • 10000:€0.7709
  • 20000:€0.6889
  • 30000:€0.6269
  • 50000:€0.5879
BSC026N02KS G
DISTI # 726-BSC026N02KSG
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
7674
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.8920
  • 500:$0.7880
  • 1000:$0.6220
BSC026N02KSGAUMA1
DISTI # 726-BSC026N02KSGAUMA
Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant
2883
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7080
  • 5000:$0.6280
BSC026N02KSGInfineon Technologies AGPower Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
40500
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
BSC026N02KSGAUMA1
DISTI # 7528154P
Infineon Technologies AGMOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL3490
  • 50:£0.8500
  • 250:£0.6650
  • 1250:£0.4650
  • 2500:£0.4400
BSC026N02KSGAUMA1
DISTI # C1S322000644539
Infineon Technologies AGMOSFETs
RoHS: Compliant
5000
  • 5000:$0.6400
BSC026N02KSGAUMA1
DISTI # C1S322000653078
Infineon Technologies AGMOSFETs
RoHS: Compliant
4849
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
BSC026N02KSGAUMA1
DISTI # 1775434
Infineon Technologies AGMOSFET, N CH, 100A, 20V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$2.1700
  • 10:$1.8500
  • 100:$1.4100
  • 500:$1.2500
  • 1000:$0.9840
  • 5000:$0.9840
Image Part # Description
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS

MOSFET DIFFERENTIATED MOSFETS
BSC026N02KS G

Mfr.#: BSC026N02KS G

OMO.#: OMO-BSC026N02KS-G-1190

MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
BSC026N02KSG

Mfr.#: BSC026N02KSG

OMO.#: OMO-BSC026N02KSG-1190

Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC026N02KSGAUMA1

Mfr.#: BSC026N02KSGAUMA1

OMO.#: OMO-BSC026N02KSGAUMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 20V 100A TDSON-8
BSC026N04LS

Mfr.#: BSC026N04LS

OMO.#: OMO-BSC026N04LS-1190

Trans MOSFET N-CH 40V 23A
BSC026N04LSATMA1

Mfr.#: BSC026N04LSATMA1

OMO.#: OMO-BSC026N04LSATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 40V 23A 8TDSON
BSC026N08NS5

Mfr.#: BSC026N08NS5

OMO.#: OMO-BSC026N08NS5-1190

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC026NE2LS5ATMA1-CUT TAPE

Mfr.#: BSC026NE2LS5ATMA1-CUT TAPE

OMO.#: OMO-BSC026NE2LS5ATMA1-CUT-TAPE-1190

New and Original
BSC026NE2LS5ATMA1

Mfr.#: BSC026NE2LS5ATMA1

OMO.#: OMO-BSC026NE2LS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET LV POWER MOS
BSC026N08NS5ATMA1

Mfr.#: BSC026N08NS5ATMA1

OMO.#: OMO-BSC026N08NS5ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 80V 100A TDSON-8
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of BSC026N02KS G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.93
$0.93
10
$0.89
$8.86
100
$0.84
$83.97
500
$0.79
$396.55
1000
$0.75
$746.40
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