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| PartNumber | BSC026N02KS G | BSC026N02KS | BSC026N02KSG |
| Description | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | Infineon Technologies | |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.1 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 52.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 2 | OptiMOS | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 95 S | - | - |
| Fall Time | 9 ns | 9 ns | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 115 ns | 115 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 52 ns | 52 ns | - |
| Typical Turn On Delay Time | 21 ns | 21 ns | - |
| Part # Aliases | BSC026N02KSGAUMA1 BSC26N2KSGXT SP000379664 | - | - |
| Part Aliases | - | BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664 | - |
| Package Case | - | 8-PowerTDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PG-TDSON-8 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 78W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 7800pF @ 10V | - |
| FET Feature | - | Logic Level Gate, 2.5V Drive | - |
| Current Continuous Drain Id 25°C | - | 25A (Ta), 100A (Tc) | - |
| Rds On Max Id Vgs | - | 2.6 mOhm @ 50A, 4.5V | - |
| Vgs th Max Id | - | 1.2V @ 200μA | - |
| Gate Charge Qg Vgs | - | 52.7nC @ 4.5V | - |
| Pd Power Dissipation | - | 2.8 W | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 25 A | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Rds On Drain Source Resistance | - | 2.6 mOhms | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC026N02KS G | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | |
| BSC026N02KSGAUMA1 | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC026N02KSGAUMA1 | MOSFET N-CH 20V 100A TDSON-8 | ||
| BSC026N02KS | New and Original | ||
| BSC026N02KS G | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC026N02KSG | Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |