IPD65R1K0CEAUMA1

Mfr. #:: IPD65R1K0CEAUMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 650V TO-252
ライフサイクル:: メーカー新製品
データシート:: IPD65R1K0CEAUMA1 データシート
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詳しくは:: IPD65R1K0CEAUMA1 詳しくは

製品属性
属性値

Tags: IPD65R1K, IPD65R1, IPD65R, IPD65, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD65R1K0CEAUMA1 説明

***ical: Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

IPD65R1K0CEAUMA1 詳しくは

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

CoolMOS CE Power MOSFETs - 600-650V: Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.

Market price

モデル	メーカー	説明	ストック	価格
IPD65R1K0CEAUMA1 DISTI # 32383709	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R	2500	2500:$0.2442
IPD65R1K0CEAUMA1 DISTI # IPD65R1K0CEAUMA1-ND	Infineon Technologies AG	MOSFET N-CH 650V TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.2969
IPD65R1K0CEAUMA1 DISTI # IPD65R1K0CEAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R1K0CEAUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2469 15000:$0.2519 10000:$0.2609 5000:$0.2699 2500:$0.2799
IPD65R1K0CEAUMA1 DISTI # SP001421368	Infineon Technologies AG	Trans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R (Alt: SP001421368) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2319 15000:€0.2489 10000:€0.2699 5000:€0.2949 2500:€0.3599
IPD65R1K0CEAUMA1 DISTI # 34AC1685	Infineon Technologies AG	MOSFET, N-CH, 650V, 7.2A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	277	1000:$0.3150 500:$0.3410 250:$0.3680 100:$0.3940 50:$0.4660 25:$0.5390 10:$0.6110 1:$0.7270
IPD65R1K0CEAUMA1 DISTI # 726-IPD65R1K0CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0	1:$0.7200 10:$0.6050 100:$0.3900 1000:$0.3120
IPD65R1K0CEAUMA1 DISTI # 2781174	Infineon Technologies AG	MOSFET, N-CH, 650V, 7.2A, TO-252 RoHS: Compliant	277	100:$0.6010 25:$0.7370 5:$0.8460
IPD65R1K0CEAUMA1 DISTI # 2781174	Infineon Technologies AG	MOSFET, N-CH, 650V, 7.2A, TO-252	247	100:£0.3730 10:£0.6360 1:£0.7880

画像	モデル	説明
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IPD65R1K0CEAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes