IPP65R110CFDAAKSA1

IPP65R110CFDAAKSA1
Mfr. #:
IPP65R110CFDAAKSA1
メーカー:
Infineon Technologies
説明:
RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO220-3
ライフサイクル:
メーカー新製品
データシート:
IPP65R110CFDAAKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IPP65R110CFDAAKSA1 詳しくは
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
IPP65R110
包装
チューブ
パーツエイリアス
IPP65R110CFDA IPP65R110CFDAXK SP000895234
単位重量
0.211644 oz
商標名
CoolMOS
パッケージ-ケース
TO-220-3
テクノロジー
Si
チャネル数
1 Channel
トランジスタタイプ
1 N-Channel
Id-連続-ドレイン-電流
31.2 A
Vds-ドレイン-ソース-ブレークダウン-電圧
650 V
Rds-On-Drain-Source-Resistance
110 mOhms
トランジスタ-極性
Nチャネル
Tags
IPP65R110CFDA, IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***i-Key
MOSFET N-CH 650V TO-220-3
***ronik
N-CH 650V 31,2A 110mOhm TO220-3
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, AEC-Q101, CAN N, 650V, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
モデル メーカー 説明 ストック 価格
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
458In Stock
  • 1000:$3.8455
  • 500:$4.5597
  • 100:$5.6310
  • 10:$6.8670
  • 1:$7.6900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$3.4900
  • 1000:$3.3900
  • 2000:$3.2900
  • 3000:$3.1900
  • 5000:$3.0900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDA
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube (Alt: IPP65R110CFDA)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 0
    IPP65R110CFDAAKSA1
    DISTI # 726-IPP65R110CFDAAKS
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO220-3
    RoHS: Compliant
    263
    • 1:$6.6100
    • 10:$5.6200
    • 100:$4.8700
    • 250:$4.6200
    • 500:$4.1500
    画像 モデル 説明
    IPP65R110CFDAAKSA1

    Mfr.#: IPP65R110CFDAAKSA1

    OMO.#: OMO-IPP65R110CFDAAKSA1

    MOSFET N-Ch 650V 31.2A TO220-3
    IPP65R110CFD

    Mfr.#: IPP65R110CFD

    OMO.#: OMO-IPP65R110CFD

    MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
    IPP65R110CFDXKSA2

    Mfr.#: IPP65R110CFDXKSA2

    OMO.#: OMO-IPP65R110CFDXKSA2

    MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
    IPP65R110CFDXKSA1

    Mfr.#: IPP65R110CFDXKSA1

    OMO.#: OMO-IPP65R110CFDXKSA1

    MOSFET HIGH POWER_LEGACY
    IPP65R110CFDXKSA1

    Mfr.#: IPP65R110CFDXKSA1

    OMO.#: OMO-IPP65R110CFDXKSA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 700V 31.2A TO220
    IPP65R110CFDXKSA2

    Mfr.#: IPP65R110CFDXKSA2

    OMO.#: OMO-IPP65R110CFDXKSA2-INFINEON-TECHNOLOGIES

    HIGH POWER_LEGACY
    IPP65R110CFDA

    Mfr.#: IPP65R110CFDA

    OMO.#: OMO-IPP65R110CFDA-1190

    ブランドニューオリジナル
    IPP65R110CFDA  65F6110A

    Mfr.#: IPP65R110CFDA 65F6110A

    OMO.#: OMO-IPP65R110CFDA-65F6110A-1190

    ブランドニューオリジナル
    IPP65R110CFDAAKSA1

    Mfr.#: IPP65R110CFDAAKSA1

    OMO.#: OMO-IPP65R110CFDAAKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO220-3
    IPP65R110CFD

    Mfr.#: IPP65R110CFD

    OMO.#: OMO-IPP65R110CFD-317

    RF Bipolar Transistors MOSFET N-Ch 700V 31.2A TO220-3 CoolMOS CFD2
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    IPP65R110CFDAAKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $4.64
    $4.64
    10
    $4.40
    $44.03
    100
    $4.17
    $417.15
    500
    $3.94
    $1 969.90
    1000
    $3.71
    $3 708.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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