HGT1S10N120BNST

Mfr. #:: HGT1S10N120BNST
メーカー:: ON Semiconductor
説明:: IGBT 1200V 35A 298W TO263AB
ライフサイクル:: メーカー新製品
データシート:: HGT1S10N120BNST データシート
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製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: IGBT-シングル

シリーズ: -

包装: Digi-ReelR代替パッケージ

単位重量: 0.046296 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

入力方式: 標準

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: TO-263AB

構成: 独身

パワーマックス: 298W

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 35A

電圧-コレクタ-エミッタ-故障-最大: 1200V

IGBTタイプ: NPT

Current-Collector-Pulsed-Icm: 80A

Vce-on-Max-Vge-Ic: 2.7V @ 15V, 10A

スイッチング-エネルギー: 320μJ (on), 800μJ (off)

ゲートチャージ: 100nC

Td-on-off-25°C: 23ns/165ns

テスト条件: 960V, 10A, 10 Ohm, 15V

Pd-電力損失: 298 W

最高作動温度: + 150 C

最低作動温度: - 55 C

コレクター-エミッター-電圧-VCEO-マックス: 1200 V

コレクター-エミッター-飽和-電圧: 2.7 V

連続-コレクター-電流-at-25-C: 35 A

ゲート-エミッタ-リーク-電流: +/- 250 nA

最大ゲート-エミッタ-電圧: +/- 20 V

連続-コレクタ-電流-Ic-Max: 35 A

Tags: HGT1S10N120BNS, HGT1S10N120B, HGT1S10N1, HGT1S10, HGT1S1, HGT1S, HGT1, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGT1S10N120BNST 説明

***Components: In a Pack of 2, ON Semiconductor HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263)

***ical: Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB

***inecomponents.com: TO-263, SINGLE, 1200V, NPT Series N-Channel IGBT

***eco: TO-263, SINGLE, 1200V, NPT SERIES N-CHANNEL IGBT<AZ

***ser: IGBTs N-Channel IGBT NPT Series 1200V

***ark: IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3

***i-Key: IGBT NPT N-CHAN 1200V TO-263AB

***Semiconductor: IGBT, 1200V, NPT

***rchild Semiconductor: HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)

***nell: IGBT, SINGOLO, 1.2KV, 35A, TO-263AB-3; Corrente di Collettore CC:35A; Tensione Saturaz Collettore-Emettitore Vce(on):2.45V; Dissipazione di Potenza Pd:298W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-263AB; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)

Market price

モデル	メーカー	説明	ストック	価格
HGT1S10N120BNST DISTI # V72:2272_06305664	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	142	100:$2.0040 25:$2.0790 10:$2.3100 1:$2.9854
HGT1S10N120BNST DISTI # V36:1790_06305664	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	0
HGT1S10N120BNST DISTI # HGT1S10N120BNSTCT-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1241In Stock	100:$2.1815 10:$2.6630 1:$2.9600
HGT1S10N120BNST DISTI # HGT1S10N120BNSTDKR-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1241In Stock	100:$2.1815 10:$2.6630 1:$2.9600
HGT1S10N120BNST DISTI # HGT1S10N120BNSTTR-ND	ON Semiconductor	IGBT 1200V 35A 298W TO263AB RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	2400:$1.4482 1600:$1.5206 800:$1.8030
HGT1S10N120BNST DISTI # 33603808	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	9600	800:$0.7986
HGT1S10N120BNST DISTI # 25744132	ON Semiconductor	TO-263, SINGLE, 1200V, NPT SER	142	100:$2.0040 25:$2.0790 10:$2.3100 5:$2.7140
HGT1S10N120BNST DISTI # HGT1S10N120BNST	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€0.8659 4800:€0.9279 3200:€0.9999 1600:€1.0829 800:€1.2999
HGT1S10N120BNST DISTI # HGT1S10N120BNST	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: HGT1S10N120BNST) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	1600:$1.7900 3200:$1.7900 4800:$1.7900 8000:$1.7900 800:$1.8900
HGT1S10N120BNST DISTI # 29H0101	ON Semiconductor	IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes	0	9600:$1.3700 2400:$1.4100 800:$1.5400 1:$1.5500
HGT1S10N120BNST DISTI # 31Y1824	ON Semiconductor	IGBT Single Transistor, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 RoHS Compliant: Yes	496	500:$1.9900 250:$2.1900 100:$2.2900 50:$2.3900 25:$2.5000 10:$2.6000 1:$3.0200
HGT1S10N120BNST DISTI # 512-HGT1S10N120BNST	ON Semiconductor	IGBT Transistors N-Channel IGBT NPT Series 1200V RoHS: Compliant	557	1:$2.7300 10:$2.3200 100:$2.0100 250:$1.9100 500:$1.7100 800:$1.4400 2400:$1.3700 4800:$1.3200
HGT1S10N120BNS DISTI # 512-HGT1S10N120BNS	ON Semiconductor	IGBT Transistors 35A 1200V NPT N-Ch RoHS: Compliant	0
HGT1S10N120BNST DISTI # 8076660P	ON Semiconductor	IGBTFAIRCHILDHGT1S10N120BNST, RL	1410	400:£1.7550 200:£2.0700 40:£2.3850 8:£2.7050
HGT1S10N120BNST DISTI # 8076660	ON Semiconductor	IGBTFAIRCHILDHGT1S10N120BNST, PK	38	400:£1.7550 200:£2.0700 40:£2.3850 8:£2.7050 2:£3.0250
HGT1S10N120BNST		INSTOCK	18466
HGT1S10N120BNST DISTI # HGT1S10N120BNST	ON Semiconductor	Transistor: IGBT,1.2kV,17A,298W,D2PAK	1049	1:$1.9100 5:$1.6400 25:$1.3200 100:$1.1800 500:$1.1100
HGT1S10N120BNST DISTI # 2454176	ON Semiconductor	IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant	496	500:$2.6400 250:$2.9400 100:$3.1000 10:$3.5700 1:$4.2000
HGT1S10N120BNST DISTI # 2454176RL	ON Semiconductor	IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3 RoHS: Compliant	0	500:$2.6400 250:$2.9400 100:$3.1000 10:$3.5700 1:$4.2000
HGT1S10N120BNST DISTI # 2454176	ON Semiconductor	IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3	720	500:£1.1400 250:£1.5200 100:£1.6000 10:£1.8300 1:£2.4300

画像	モデル	説明
	Mfr.#: HGT1S10N120BNST OMO.#: OMO-HGT1S10N120BNST	IGBT Transistors N-Channel IGBT NPT Series 1200V
	Mfr.#: HGT1S10N120BNS OMO.#: OMO-HGT1S10N120BNS	IGBT Transistors 35A 1200V NPT N-Ch
	Mfr.#: HGT1S10N120BNST OMO.#: OMO-HGT1S10N120BNST-ON-SEMICONDUCTOR	IGBT 1200V 35A 298W TO263AB
	Mfr.#: HGT1S10N1208NST OMO.#: OMO-HGT1S10N1208NST-1190	ブランドニューオリジナル
	Mfr.#: HGT1S10N120BN OMO.#: OMO-HGT1S10N120BN-1190	ブランドニューオリジナル
	Mfr.#: HGT1S10N120BNS OMO.#: OMO-HGT1S10N120BNS-ON-SEMICONDUCTOR	IGBT 1200V 35A 298W TO263AB
	Mfr.#: HGT1S10N50 OMO.#: OMO-HGT1S10N50-1190	ブランドニューオリジナル
	Mfr.#: HGT1S10N120BNS 10N120BN OMO.#: OMO-HGT1S10N120BNS-10N120BN-1190	ブランドニューオリジナル

HGT1S10N120BNST

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes