HGT1S10 stock, HGT1S10, HGT1S10N120BNST


PartNumber	HGT1S10N120BNST	HGT1S10N120BNS
Description	IGBT Transistors N-Channel IGBT NPT Series 1200V	IGBT Transistors 35A 1200V NPT N-Ch
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	E	E
Technology	Si	Si
Package / Case	TO-263AB-3	TO-263AB-3
Mounting Style	SMD/SMT	SMD/SMT
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V
Collector Emitter Saturation Voltage	2.7 V	2.7 V
Maximum Gate Emitter Voltage	20 V	20 V
Continuous Collector Current at 25 C	35 A	35 A
Pd Power Dissipation	298 W	298 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	HGT1S10N120BNS	HGT1S10N120BNS
Packaging	Reel	Tube
Continuous Collector Current Ic Max	35 A	35 A
Height	4.83 mm	4.83 mm
Length	10.67 mm	10.67 mm
Width	9.65 mm	9.65 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	55 A	55 A
Gate Emitter Leakage Current	+/- 250 nA	+/- 250 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	800	800
Subcategory	IGBTs	IGBTs
Unit Weight	0.046296 oz	0.046296 oz

Search Part Number : "HGT1S10", Match & Start with "HGT1S10" - Total : 8

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	HGT1S10N120BNST	IGBT Transistors N-Channel IGBT NPT Series 1200V
ON Semiconductor / Fairchild	HGT1S10N120BNS	IGBT Transistors 35A 1200V NPT N-Ch
ON Semiconductor	HGT1S10N120BNST	IGBT 1200V 35A 298W TO263AB
ON Semiconductor	HGT1S10N120BNS	IGBT 1200V 35A 298W TO263AB
	HGT1S10N1208NST	New and Original
	HGT1S10N120BN	New and Original
	HGT1S10N50	New and Original
	HGT1S10N120BNS 10N120BN	New and Original

HGT1S10