BUZ31H

Mfr. #:: BUZ31H
メーカー:: Infineon Technologies AG
説明:: Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ライフサイクル:: メーカー新製品
データシート:: BUZ31H データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: BUZ31H, BUZ31, BUZ3, BUZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BUZ31H 説明

***ical: Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220

***o-Tech: MOSFET N-Channel 200V 14.5A TO220

***i-Key: MOSFET N-CH 200V 14.5A TO220-3

***ronik: N-CH 200V 15A 200mOhm TO220-3 RoHSconf

Market price

モデル	メーカー	説明	ストック	価格
BUZ31 H3045A DISTI # BUZ31H3045ACT-ND	Infineon Technologies AG	MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1076In Stock	500:$0.9656 100:$1.0383 10:$1.2300 1:$1.5600
BUZ31 H3045A DISTI # BUZ31H3045ADKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1076In Stock	500:$0.9656 100:$1.0383 10:$1.2300 1:$1.5600
BUZ31 H3045A DISTI # BUZ31H3045ATR-ND	Infineon Technologies AG	MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	1000:$0.8732
BUZ31HXKSA1 DISTI # BUZ31HXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 14.5A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
BUZ31H3046XKSA1 DISTI # BUZ31H3046XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 200V 14.5A TO262-3 RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
BUZ31H3046 DISTI # BUZ31H3046	Infineon Technologies AG	Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) Min Qty: 500 Container: Bulk	Americas - 0	5000:$0.6349 2500:$0.6459 1500:$0.6689 1000:$0.6939 500:$0.7199
BUZ31HXKSA1 DISTI # BUZ31HXKSA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 14.5A 3-Pin TO-220 - Bulk (Alt: BUZ31HXKSA1) RoHS: Compliant Min Qty: 500 Container: Bulk	Americas - 0	5000:$0.6349 2500:$0.6459 1500:$0.6689 1000:$0.6939 500:$0.7199
BUZ31H3046XKSA1 DISTI # BUZ31H3046XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 14.5A 3-Pin TO-262 Tube - Bulk (Alt: BUZ31H3046XKSA1) Min Qty: 500 Container: Bulk	Americas - 0	5000:$0.6349 2500:$0.6459 1500:$0.6689 1000:$0.6939 500:$0.7199
BUZ31 H DISTI # 726-BUZ31H	Infineon Technologies AG	MOSFET N-Ch 200V 14.5A TO220FP-3 RoHS: Compliant	0
BUZ31H3046XKSA1 DISTI # 726-BUZ31H3046XKSA1	Infineon Technologies AG	MOSFET N-Ch 200V 14.5A I2PAK-3 RoHS: Compliant	143	1:$1.6300 10:$1.3900 100:$1.0700 500:$0.9420 1000:$0.7430 2000:$0.6590 10000:$0.6350
BUZ31 H3045A DISTI # 726-BUZ31H3045A	Infineon Technologies AG	MOSFET N-Ch 200V 14.5A D2PAK-2 RoHS: Compliant	0
BUZ31H3046	Infineon Technologies AG	Infineon N-Channel Power MOSFETBUZ31 - TO262 RoHS: Not Compliant	700	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
BUZ31HXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	6500	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
BUZ31H3046XKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	8791	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
BUZ31H	Infineon Technologies AG	Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	146

関連製品

画像	モデル	説明
	Mfr.#: BUZ103SL-E3045A OMO.#: OMO-BUZ103SL-E3045A-1190	Trans MOSFET N-CH 55V 28A 3-Pin TO-263 T/R - Bulk (Alt: BUZ103SL-E3045A)
	Mfr.#: BUZ104 OMO.#: OMO-BUZ104-1190	Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: BUZ11A OMO.#: OMO-BUZ11A-1190	MOSFET N-Ch 50 Volt 26 Amp
	Mfr.#: BUZ20 OMO.#: OMO-BUZ20-1190	MOSFET Transistor, N-Channel, TO-220AB
	Mfr.#: BUZ214 OMO.#: OMO-BUZ214-1190	ブランドニューオリジナル
	Mfr.#: BUZ310 OMO.#: OMO-BUZ310-1190	ブランドニューオリジナル
	Mfr.#: BUZ31H OMO.#: OMO-BUZ31H-1190	Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
	Mfr.#: BUZ36 OMO.#: OMO-BUZ36-1190	Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
	Mfr.#: BUZ73 OMO.#: OMO-BUZ73-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 7A TO-220AB
	Mfr.#: BUZZER-KPS-128100F-0502 OMO.#: OMO-BUZZER-KPS-128100F-0502-1190	ブランドニューオリジナル

可用性

ストック:: Available
注文中:: 2000
数量を入力してください:

BUZ31Hの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。

参考価格（USD）

量
単価
小計金額

1: ~~$0.00~~; ~~$0.00~~

10: ~~$0.00~~; ~~$0.00~~

100: ~~$0.00~~; ~~$0.00~~

500: ~~$0.00~~; ~~$0.00~~

1000: ~~$0.00~~; ~~$0.00~~

2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。

皮切りに

BUZ31H 8
BUZ31 26
BUZ3 105
BUZ 428

BUZ31H

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes