 | | | |
| PartNumber | BUZ31H | BUZ31H3045A | BUZ31H3045AATMA1 |
| Description | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BUZ31H3046XKSA1 | MOSFET N-Ch 200V 14.5A I2PAK-3 | |
| BUZ31H | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| BUZ31H3045A | New and Original | ||
| BUZ31H3045AATMA1 | New and Original | ||
| BUZ31H3046 | Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) | ||
Infineon Technologies |
BUZ31H3046XKSA1 | MOSFET N-CH 200V 14.5A TO262-3 | |
| BUZ31HXKSA1 | MOSFET N-CH 200V 14.5A TO220-3 |