IPB060N15N5ATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-7

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

150 V

Id - Continuous Drain Current:

136 A

Rds On - Drain-Source Resistance:

4.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

68 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

250 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Series:

OptiMOS 5

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

53 S

Fall Time:

4.1 ns

Product Type:

MOSFET

Rise Time:

4.3 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

22.2 ns

Typical Turn-On Delay Time:

14.9 ns

Part # Aliases:

IPB060N15N5 SP001607814

Unit Weight:

0.051500 oz

Tags

IPB06, IPB0, IPB