BSZ900N20NS3GATMA1

Mfr. #:: BSZ900N20NS3GATMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 200V 15.2A 8TSDSON
ライフサイクル:: メーカー新製品
データシート:: BSZ900N20NS3GATMA1 データシート
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ECAD Model:
詳しくは:: BSZ900N20NS3GATMA1 詳しくは

製品属性
属性値

Tags: BSZ900N2, BSZ9, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ900N20NS3GATMA1 説明

***Components: In a Pack of 10, N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON Infineon BSZ900N20NS3GATMA1

***ure Electronics: Single N-Channel 200 V 90 mOhm 8.7 nC OptiMOS Power Mosfet - TSDSON-8

***p One Stop Japan: Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R

***et Europe: Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R

***ponent Sense: MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3

***i-Key: MOSFET N-CH 200V 15.2A 8TDSON

***ronik: N-CH 200V 15A 90mOhm S3O8

***ical: BSZ900N20NS3 G

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62.5W; No. Of Pins:8Pins Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 200V, 15.2A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62.5W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 200V, 15.2A, TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:15.2A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.077ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:62.5W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

BSZ900N20NS3GATMA1 詳しくは

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Market price

モデル	メーカー	説明	ストック	価格
BSZ900N20NS3GATMA1 DISTI # V72:2272_06383706	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R RoHS: Compliant	4781	3000:$0.7643 1000:$0.8203 500:$0.8925 250:$1.0368 100:$1.0460 25:$1.1719 10:$1.3021 1:$1.6805
BSZ900N20NS3GATMA1 DISTI # V36:1790_06383706	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R RoHS: Compliant	0	5000000:$0.6113 2500000:$0.6114 500000:$0.6125 50000:$0.6137 5000:$0.6139
BSZ900N20NS3GATMA1 DISTI # BSZ900N20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 15.2A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4872In Stock	1000:$0.8230 500:$0.9932 100:$1.2089 10:$1.5040 1:$1.6700
BSZ900N20NS3GATMA1 DISTI # BSZ900N20NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 15.2A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4872In Stock	1000:$0.8230 500:$0.9932 100:$1.2089 10:$1.5040 1:$1.6700
BSZ900N20NS3GATMA1 DISTI # BSZ900N20NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 15.2A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	10000:$0.6980 5000:$0.7164
BSZ900N20NS3GATMA1 DISTI # 32695623	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$1.0750
BSZ900N20NS3GATMA1 DISTI # 31230047	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP T/R RoHS: Compliant	4781	9:$1.6923
BSZ900N20NS3GATMA1 DISTI # BSZ900N20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ900N20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.6659 30000:$0.6779 20000:$0.7019 10000:$0.7279 5000:$0.7559
BSZ900N20NS3GATMA1 DISTI # BSZ900N20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R - Bulk (Alt: BSZ900N20NS3GATMA1) RoHS: Compliant Min Qty: 532 Container: Bulk	Americas - 0	5320:$0.5969 2660:$0.6079 1596:$0.6289 1064:$0.6519 532:$0.6769
BSZ900N20NS3GATMA1 DISTI # SP000781806	Infineon Technologies AG	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON T/R (Alt: SP000781806) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.6699 30000:€0.7139 20000:€0.7849 10000:€0.8789 5000:€1.1259
BSZ900N20NS3GATMA1 DISTI # 79X1341	Infineon Technologies AG	MOSFET, N-CH, 200V, 15.2A, PG-TSDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	28	1000:$0.7690 500:$0.9280 250:$0.9940 100:$1.0600 50:$1.1500 25:$1.2400 10:$1.3200 1:$1.5600
BSZ900N20NS3GATMA1. DISTI # 27AC1118	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:15.2A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:62.5W,No. of Pins:8Pins RoHS Compliant: Yes	0	50000:$0.6660 30000:$0.6780 20000:$0.7020 10000:$0.7280 1:$0.7560
BSZ900N20NS3GATMA1	Infineon Technologies AG	Single N-Channel 200 V 90 mOhm 8.7 nC OptiMOS Power Mosfet - TSDSON-8 RoHS: Not Compliant	5000Reel	5000:$0.6550
BSZ900N20NS3 G DISTI # 726-BSZ900N20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 RoHS: Compliant	2318	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9190 1000:$0.7610 2500:$0.7090 5000:$0.6830 10000:$0.6560
BSZ900N20NS3GATMA1 DISTI # 726-BSZ900N20NS3GATM	Infineon Technologies AG	MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 RoHS: Compliant	7907	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9190 1000:$0.7610 2500:$0.7090 5000:$0.6830 10000:$0.6560
BSZ900N20NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant	90	1000:$0.6200 500:$0.6500 100:$0.6800 25:$0.7100 1:$0.7600
BSZ900N20NS3GATMA1 DISTI # 9064444P	Infineon Technologies AG	MOSFET N-CH 200V 15.2A OPTIMOS TSDSON8EP, RL	10	2500:£0.5500 1000:£0.5640 500:£0.6550 100:£0.7460
BSZ900N20NS3GATMA1 DISTI # 2432723RL	Infineon Technologies AG	MOSFET, N CH, 200V, 15.2A, TSDSON-8 RoHS: Compliant	0	5000:$1.0600 2500:$1.1000 1000:$1.1800 500:$1.4100 100:$1.6200 10:$2.0100 1:$2.3700
BSZ900N20NS3GATMA1 DISTI # 2432723	Infineon Technologies AG	MOSFET, N CH, 200V, 15.2A, TSDSON-8 RoHS: Compliant	2	5000:$1.0600 2500:$1.1000 1000:$1.1800 500:$1.4100 100:$1.6200 10:$2.0100 1:$2.3700
BSZ900N20NS3GATMA1 DISTI # 2432723	Infineon Technologies AG	MOSFET, N CH, 200V, 15.2A, TSDSON-8	87	500:£0.7160 250:£0.7670 100:£0.8170 10:£1.0700 1:£1.3600
BSZ900N20NS3GATMA1 DISTI # XSFP00000136212	Infineon Technologies AG	RoHS: Compliant	10000 in Stock0 on Order	10000:$0.8733 5000:$0.9357

画像	モデル	説明
	Mfr.#: BSZ900N20NS3 G OMO.#: OMO-BSZ900N20NS3-G	MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
	Mfr.#: BSZ900N20NS3GATMA1 OMO.#: OMO-BSZ900N20NS3GATMA1	MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3
	Mfr.#: BSZ900N20NS3 G OMO.#: OMO-BSZ900N20NS3-G-1190	Trans MOSFET N-CH 200V 15.2A 8-Pin TSDSON EP (Alt: BSZ900N20NS3 G)
	Mfr.#: BSZ900N20NS3G OMO.#: OMO-BSZ900N20NS3G-1190	ブランドニューオリジナル
	Mfr.#: BSZ900N20NS3GATMA1 OMO.#: OMO-BSZ900N20NS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 200V 15.2A 8TSDSON

BSZ900N20NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes