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SGP23N60UFDTU

SGP23N60UFDTU
Mfr. #:
SGP23N60UFDTU
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors Dis High Perf IGBT
ライフサイクル:
メーカー新製品
データシート:
SGP23N60UFDTU データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SGP23N60UFDTU Datasheet
ECAD Model:
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-220-3
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
600 V
コレクター-エミッター飽和電圧：
2.1 V
最大ゲートエミッタ電圧：
20 V
25℃での連続コレクタ電流：
23 A
Pd-消費電力：
100 W
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
シリーズ：
SGP23N60UFD
包装：
チューブ
連続コレクタ電流IcMax：
23 A
高さ：
9.4 mm
長さ：
10.1 mm
幅：
4.7 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
連続コレクタ電流：
23 A
ゲートエミッタリーク電流：
+/- 100 nA
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
1000
サブカテゴリ：
IGBT
パーツ番号エイリアス：
SGP23N60UFDTU_NL
単位重量：
0.063493 oz
Tags
SGP23N60UFD, SGP23N60U, SGP23, SGP2, SGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
モデル メーカー 説明 ストック 価格
SGP23N60UFDTU
DISTI # C1S541901576781		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		5200
  • 2000:$0.9020
  • 500:$1.2700
  • 5:$2.0700
SGP23N60UFDTU
DISTI # SGP23N60UFDTU-ND		ON SemiconductorIGBT 600V 23A 100W TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
  • 1000:$1.0099
SGP23N60UFDTU
DISTI # SGP23N60UFDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 23A 3-Pin(3+Tab) TO-220 Rail - Rail/Tube (Alt: SGP23N60UFDTU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.7909
  • 2000:$0.7859
  • 4000:$0.7759
  • 6000:$0.7659
  • 10000:$0.7469
SGP23N60UFDTU
DISTI # 512-SGP23N60UFDTU		ON SemiconductorIGBT Transistors Dis High Perf IGBT
RoHS: Compliant		0
    SGP23N60UFDTU
    DISTI # XSFP00000158817    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		1346
    • 1000:$1.9400
    • 1346:$1.7600
    画像 モデル 説明
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60

    Mfr.#: SGP23N60

    OMO.#: OMO-SGP23N60-1190

    		 ブランドニューオリジナル
    SGP23N60RUFD

    Mfr.#: SGP23N60RUFD

    OMO.#: OMO-SGP23N60RUFD-1190

    		 ブランドニューオリジナル
    SGP23N60UF

    Mfr.#: SGP23N60UF

    OMO.#: OMO-SGP23N60UF-1190

    		 ブランドニューオリジナル
    SGP23N60UFD

    Mfr.#: SGP23N60UFD

    OMO.#: OMO-SGP23N60UFD-1190

    		 ブランドニューオリジナル
    SGP23N60UFD G23N60UFD

    Mfr.#: SGP23N60UFD G23N60UFD

    OMO.#: OMO-SGP23N60UFD-G23N60UFD-1190

    		 ブランドニューオリジナル
    SGP23N60UFDTU_NL

    Mfr.#: SGP23N60UFDTU_NL

    OMO.#: OMO-SGP23N60UFDTU-NL-1190

    		 ブランドニューオリジナル
    SGP23N60UFDTU

    Mfr.#: SGP23N60UFDTU

    OMO.#: OMO-SGP23N60UFDTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Dis High Perf IGBT
    SGP23N60UFTU

    Mfr.#: SGP23N60UFTU

    OMO.#: OMO-SGP23N60UFTU-ON-SEMICONDUCTOR

    		 IGBT 600V 23A 100W TO220-3
    可用性
    ストック:
    Available
    注文中:
    4000
    数量を入力してください:
    SGP23N60UFDTUの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $2.13
    $2.13
    10
    $1.81
    $18.10
    100
    $1.45
    $145.00
    500
    $1.27
    $635.00
    1000
    $1.05
    $1 050.00
    2000
    $0.98
    $1 960.00
    5000
    $0.94
    $4 715.00
    10000
    $0.91
    $9 070.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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