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| PartNumber | SGP23N60UFDTU | SGP23N60UFD | SGP23N60UFD G23N60UFD |
| Description | IGBT Transistors Dis High Perf IGBT | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.1 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 23 A | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | SGP23N60UFD | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 23 A | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.1 mm | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 23 A | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | SGP23N60UFDTU_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |