R6020KNZ4C13

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

20 A

Rds On - Drain-Source Resistance:

196 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

40 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

231 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

ROHM Semiconductor

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

30 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

55 ns

Typical Turn-On Delay Time:

30 ns

Tags

R6020KNZ, R6020K, R6020, R602, R60